Integrated circuit structure

ABSTRACT

An IC device includes a first anti-fuse structure including a first dielectric layer between a first gate conductor and a first active area, and a second anti-fuse structure including a second dielectric layer between a second gate conductor and the first active area. A first via is electrically connected to the first gate conductor at a first location a first distance from the first active area, a second via is electrically connected to the second gate conductor at a second location a second distance from the first active area, and the first distance is approximately equal to the second distance.

PRIORITY CLAIM

The present application is a divisional of U.S. application Ser. No.16/252,291, filed Jan. 18, 2019, which claims the priority of U.S.Provisional Application No. 62/630,160, filed Feb. 13, 2018, which isincorporated herein by reference in its entirety.

BACKGROUND

Integrated circuits (ICs) sometimes include one-time-programmable(“OTP”) memory elements to provide non-volatile memory (“NVM”) in whichdata are not lost when the IC is powered off. One type of NVM includesan anti-fuse bit integrated into an IC by using a layer of dielectricmaterial (oxide, etc.) connected to other circuit elements. To programan anti-fuse bit, a programming electric field is applied across thedielectric material layer to sustainably alter (e.g., break down) thedielectric material, thus decreasing the resistance of the dielectricmaterial layer. Typically, to determine the status of an anti-fuse bit,a read voltage is applied across the dielectric material layer and aresultant current is read.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a diagram of an anti-fuse cell, in accordance with someembodiments.

FIG. 1B is a schematic diagram of a portion of an anti-fuse cell, inaccordance with some embodiments.

FIGS. 1C-1E are diagrams of an anti-fuse cell array, in accordance withsome embodiments.

FIGS. 1F-1H are schematic diagrams of portions of an anti-fuse cellarray, in accordance with some embodiments.

FIG. 2 is a flowchart of a method of generating an IC layout diagram, inaccordance with some embodiments.

FIGS. 3A-3D are diagrams of anti-fuse arrays, in accordance with someembodiments.

FIG. 4 is a flowchart of a method of generating an IC layout diagram, inaccordance with some embodiments.

FIGS. 5A-5C are diagrams of an IC device, in accordance with someembodiments.

FIG. 6 is a flowchart of a method of performing a read operation on ananti-fuse cell, in accordance with some embodiments.

FIG. 7 is a block diagram of an electronic design automation (EDA)system, in accordance with some embodiments.

FIG. 8 is a block diagram of an IC manufacturing system, and an ICmanufacturing flow associated therewith, in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, values, operations, materials,arrangements, or the like, are described below to simplify the presentdisclosure. These are, of course, merely examples and are not intendedto be limiting. Other components, values, operations, materials,arrangements, or the like, are contemplated. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In various embodiments, IC layouts and anti-fuse structures and arraysmanufactured from the IC layouts include a gate structure segmentbetween each anti-fuse structure and a nearest electrical connectionthat is shorter than a distance between adjacent active areas containinganti-fuse structures. Compared to approaches that include gate structuresegments longer than a distance between adjacent active areas, currentsin read operations are increased and more uniform based on the uniformlylow resistance of the gate structure segment connected to each anti-fusestructure.

FIG. 1A is a diagram of an anti-fuse cell A1, in accordance with someembodiments. FIG. 1A depicts a plan view of an IC layout diagram ofanti-fuse cell A1, an X direction, a Y direction perpendicular to the Xdirection, a bit line BL1 extending in the X direction, and gate regionsP1-P10 extending in the Y direction.

In various embodiments, anti-fuse cell A1 is a standalone cell, e.g., astandard cell stored in a cell library, or is a part of a larger IClayout diagram, e.g., a standard cell or other circuit includingfeatures in addition to those depicted in FIG. 1A. In some embodiments,anti-fuse cell A1 is included in an anti-fuse cell array, e.g., ananti-fuse cell array 100, discussed below with respect to FIGS. 1C and1D.

In various embodiments, the portion of bit line BL1 overlying anti-fusecell A1 is either included or not included in the IC layout diagram ofanti-fuse cell A1, and the portions of some or all of gate regionsP1-P10 overlying anti-fuse cell A1 are either included or not includedin the IC layout diagram of anti-fuse cell A1.

Anti-fuse cell A1 includes active regions AA0, AA1, and AA2 andconductive regions Z0, Z1, and Z2. Active regions AA0, AA1, and AA2extend in the X direction and are aligned with each other in the Ydirection. Conductive regions Z0 and Z1 extend in the X direction, arealigned with each other in the X direction, and are positioned betweenadjacent active regions AA0 and AA1. Conductive region Z2 extends in theX direction and is positioned between adjacent active regions AA1 andAA2.

Each active region AA0, AA1, and AA2 is a region in the IC layoutdiagram included in a manufacturing process as part of defining anactive area, also referred to as an oxide diffusion or definition (OD),in a semiconductor substrate in which one or more IC device features,e.g., a source/drain region, is formed. In various embodiments, anactive area is an n-type or p-type active area of a planar transistor ora fin, field-effect transistor (FinFET). In some embodiments, activeregion AA1 is included in a manufacturing process as part of defining anactive area 5AA1 discussed below with respect to FIG. 5A.

Each gate region P1-P10 is a region in the IC layout diagram included inthe manufacturing process as part of defining a gate structure in the ICdevice including at least one of a conductive material or a dielectricmaterial. In various embodiments, one or more gate structurescorresponding to gate regions P1-P10 includes at least one conductivematerial overlying at least one dielectric material. In someembodiments, gate regions P4-P7 are included in a manufacturing processas part of defining respective gate structures 5P4-5P7 discussed belowwith respect to FIGS. 5A-5C.

In the embodiment depicted in FIG. 1A, each gate region P4-P7 overlieseach active region AA0, AA1, and AA2. In various embodiments, one ormore of gate regions P4-P7 does not overlie one or more of activeregions AA0, AA1, or AA2, or one or more gate regions (not shown) inaddition to gate regions P4-P7 overlies one or more of active regionsAA0, AA1, or AA2.

In the embodiment depicted in FIG. 1A, each gate region P1-P3 and P8-P10does not overlie any of active regions AA0, AA1, or AA2. In variousembodiments, one or more of gate regions P1-P3 or P8-P10 overlies one ormore of active regions AA0, AA1, or AA2. In various embodiments,anti-fuse cell A1 includes one or more gate regions (not shown) inaddition to gate regions P1-P10, and/or anti-fuse cell A1 does notinclude one or more of gate regions P1-P3 or P8-P10.

Each conductive region Z0, Z1, and Z2, and bit line BL1 is a region inthe IC layout diagram included in the manufacturing process as part ofdefining one or more segments of one or more conductive layers in the ICdevice. In various embodiments, one or more of conductive regions Z0,Z1, or Z2, or bit line BL1 corresponds to one or more segments of a sameor different conductive layers in the IC device. In various embodiments,one or more of conductive regions Z0, Z1, or Z2, or bit line BL1corresponds to one or more of a metal zero, a metal one, or a highermetal layer in the IC device. In some embodiments, conductive regions Z0and Z1 and bit line BL1 are included in a manufacturing process as partof defining conductive segments 5Z0 and 5Z1 and conductive segment 5BL,respectively, discussed below with respect to FIGS. 5A-5C.

Conductive region Z0 overlies each gate region P2-P4, and a conductiveregion V0 is positioned at the location at which conductive region Z0overlies gate region P4. Conductive region Z1 overlies each gate regionP7-P9, and a conductive region V1 is positioned at the location at whichconductive region Z1 overlies gate region P7. Conductive region Z2overlies each gate region P4-P7, and a conductive region V2 ispositioned at the location at which conductive region Z2 overlies gateregion P6.

Each conductive region V0, V1, and V2 is a region in the IC layoutdiagram included in the manufacturing process as part of defining one ormore segments of one or more conductive layers in the IC deviceconfigured to form an electrical connection between one or moreconductive layer segments corresponding to a respective conductiveregion Z0, Z1, or Z2, and a gate structure corresponding to a respectivegate region P4, P7, or P6. In various embodiments, the one or moreconductive layer segments formed based on each conductive region V0, V1,and V2 includes a via between a corresponding gate structure and acorresponding segment in an overlying metal layer, e.g., a metal zerolayer, of the IC device. In some embodiments, conductive regions V0 andV1 are included in a manufacturing process as part of definingrespective vias 5V0 and 5V1 discussed below with respect to FIGS. 5A and5C.

Conductive regions Z0 and Z1 are separated by a distance D1 in the Xdirection. Distance D1 has a value equal to or greater than apredetermined distance based on one or more design rules for theconductive layer that includes conductive regions Z0 and Z1. In variousembodiments, the predetermined distance is based on one or a combinationof a minimum spacing rule for a metal layer, e.g., a metal zero layer,or a minimum spacing rule for a circuit design-based voltage differencebetween conductive regions Z0 and Z1. In a non-limiting example, aminimum spacing rule for a circuit design-based voltage difference is aminimum distance between two conductors configured so that one of thetwo conductors is capable of carrying a power supply voltage level andthe other of the two conductors is capable of carrying a reference orground voltage level.

Bit line BL1 overlies active region AA1, and a conductive region C1 ispositioned over active region AA1 between gate regions P5 and P6.Conductive region C1 is a region in the IC layout diagram included inthe manufacturing process as part of defining one or more segments ofone or more conductive layers in the IC device configured to form anelectrical connection between the one or more segments based on bit lineBL1 and the active area based on active region AA1. In variousembodiments, the one or more conductive layer segments formed based onconductive region C1 includes a contact between the active area based onactive region AA1 and the one or more segments based on bit line BL1 inan overlying metal layer, e.g., a metal zero layer, of the IC device. Insome embodiments, conductive region C1 is included in a manufacturingprocess as part of defining a contact 5C1 discussed below with respectto FIGS. 5A and 5B.

By the configuration discussed above, an IC device manufactured based onanti-fuse cell A1 includes anti-fuse bits B1 and B5 positioned withinthe active area based on active region AA1. Anti-fuse bit B1 includes ananti-fuse structure B1P and a transistor B1R, and anti-fuse bit B5includes an anti-fuse structure B5P and a transistor B5R.

In various embodiments, anti-fuse cell A1 is configured such that one orboth of active regions AA0 or AA2, in combination with one or moreactive regions of one or more cells adjacent to anti-fuse cell A1, e.g.,an anti-fuse cell A2 discussed below with respect to FIG. 1C, includesone or more anti-fuse bits (not labeled in FIG. 1A) in addition toanti-fuse bits B1 and B5.

Anti-fuse structure B1P is formed at the location at which gate regionP4 intersects active region AA1 and is based on the portion of gateregion P4 that overlies active region AA1, a first portion of activeregion AA1 adjacent to gate region P4 in the negative X direction, and asecond portion of active region AA1 extending from gate region P4 togate region P5 in the X direction. In some embodiments, gate region P4overlies active region AA1 along the left edge of active region AA1 suchthat anti-fuse structure B1P does not include an active area portioncorresponding to active region AA1 adjacent to gate region P4 in thenegative X direction.

At least a portion of the gate structure corresponding to gate region P4and overlying the active area corresponding to region AA1 includes alayer of one or more dielectric materials configured so that, inoperation, a sufficiently large electric field across the dielectriclayer sustainably alters a dielectric material, thereby significantlydecreasing the resistance of the dielectric layer from a level prior toapplication of the electric field. Sustainably altering the dielectricmaterial is also referred to as breaking down the dielectric material,in some embodiments.

In some embodiments in which anti-fuse structure B1P includes an activearea portion corresponding to active region AA1 adjacent to gate regionP4 in the negative X direction, anti-fuse structure B1P is referred toas a programming transistor. In some embodiments, e.g., embodiments inwhich anti-fuse structure B1P does not include an active area portioncorresponding to active region AA1 adjacent to gate region P4 in thenegative X direction, anti-fuse structure B1P is referred to as aprogramming capacitor.

Transistor B1R is formed at the location at which gate region P5intersects active region AA1 and is based on the portion of gate regionP5 that overlies active region AA1, the second portion of active regionAA1 extending from gate region P4 to gate region P5, and a third portionof active region AA1 extending from gate region P5 to gate region P6 inthe X direction.

Transistor B1R is electrically connected with anti-fuse structure B1Pthrough the active area portion corresponding to active region AA1between gate regions P4 and P5, and electrically connected with the oneor more segments corresponding to bit line BL1 through the active areaportion corresponding to active region AA1 between gate regions P5 andP6 in series with the one or more conductive segments corresponding toconductive region C1.

The gate structure corresponding to gate region P5 is thereby configuredas the gate of transistor B1R and is responsive to a signal WLR0. Thegate structure corresponding to gate region P4 is thereby configured asa terminal of anti-fuse structure B1P and is responsive to a signalWLP0.

Anti-fuse structure B5P and transistor B5R of anti-fuse bit B5 areformed at the respective locations at which gate regions P7 and P6intersect active region AA1, and are configured in the manner describedabove with respect to anti-fuse bit B1 such that the gate structurecorresponding to gate region P6 is configured as the gate of transistorB5R responsive to a signal WLR1 and the gate structure corresponding togate region P7 is configured as a terminal of anti-fuse structure B5Presponsive to a signal WLP1.

Each of a gate structure portion corresponding to gate region P4 betweenconductive region V0 and anti-fuse bit B1 and a gate structure portioncorresponding to gate region P7 between conductive region V1 andanti-fuse bit B5 has a length L. Adjacent active regions AA0 and AA1 areseparated by a distance AAL. Because conductive regions V0 and V1 arepositioned between adjacent active regions AA0 and AA1, length L isshorter than distance AAL.

FIG. 1B is a schematic diagram of the portion of anti-fuse cell A1corresponding to anti-fuse bits B1 and B5, in accordance with someembodiments. As depicted in FIG. 1B, bit line BL1 is electricallyconnected with first source/drain terminals of each of transistors B1Rand B5R in the active area portion corresponding to active region AA1between gate regions P5 and P6. The second source/drain terminal oftransistor B1R is electrically connected with a source/drain terminal ofanti-fuse structure B1P in the active area portion corresponding toactive region AA1 between gate regions P4 and P5, and the secondsource/drain terminal of transistor B5R is electrically connected with asource/drain terminal of anti-fuse structure B5P in the active areaportion corresponding to active region AA1 between gate regions P6 andP7.

The gate structure portion corresponding to gate region P4 betweenconductive region V0 and anti-fuse bit B1 is represented as a resistorRP0, and the gate structure portion corresponding to gate region P7between conductive region V1 and anti-fuse bit B5 is represented as aresistor RP1.

In programming and read operations on anti-fuse bit B1, signal WLP0 isapplied to anti-fuse structure B1P through resistor RP0, transistor B1Ris turned on responsive to signal WLR0 applied through the gatestructure corresponding to gate region P5, and a reference voltage isapplied to bit line BL1. In programming and read operations on anti-fusebit B5, signal WLP1 is applied to anti-fuse structure B5P throughresistor RP1, transistor B5R is switched on responsive to signal WLR1applied through the gate structure corresponding to gate region P6, andthe reference voltage level is applied to bit line BL1.

In programming and read operations on either of anti-fuse bits B1 or B5,a current IBL flows to bit line BL1. Magnitudes and polarities ofcurrent IBL are based on magnitudes and polarities of signals WLP0 andWLP1 relative to the reference voltage applied to bit line BL1, and onpath resistance values presented either by the series of resistor RP0,anti-fuse structure B1P, and transistor B1R, or by the series ofresistor RP1, anti-fuse structure B5P, and transistor B5R.

In the embodiment depicted in FIG. 1B, anti-fuse structures B1P and B5Pand transistors B1R and B5R are NMOS devices, transistors B1R and B5Rthereby being configured to be switched on in response to a respectivesignal WLR0 or WLR1 having a sufficiently large positive value relativeto the reference voltage level. In some embodiments, anti-fusestructures B1P and B5P and transistors B1R and B5R are PMOS devices,transistors B1R and B5R thereby being configured to be switched on inresponse to a respective signal WLR0 or WLR1 having a sufficiently largenegative value relative to the reference voltage level.

In a programming operation, signal WLP0 or WLP1 has a programmingvoltage level such that a difference between the programming voltagelevel and the reference voltage level produces an electric field acrossthe dielectric layer of the corresponding anti-fuse structure B1P or B5Psufficiently large to sustainably alter the dielectric material, theresultant lowered resistance being represented in FIG. 1B as arespective resistor RB1 or RB5.

In a read operation, signal WLP0 or WLP1 has a read voltage level suchthat a difference between the read voltage level and the referencevoltage level produces an electric field that is sufficiently small toavoid sustainably altering the dielectric material of the correspondinganti-fuse structure B1P or B5P, and sufficiently large to generatecurrent IBL having a magnitude capable of being sensed by a senseamplifier (not shown) and thereby used to determine a programmed statusof the corresponding anti-fuse structure B1P or B5P.

In various embodiments, one or both of the programming or read voltagelevels is either positive relative to the reference voltage level ornegative relative to the reference voltage level.

By the configuration discussed above, in operation, signal WLR1 isprovided to transistor B5R through the conductive segments correspondingto conductive regions Z2 and V2 and the gate structure corresponding togate region P6, and signal WLR0 is provided to transistor B1R throughthe gate structure corresponding to gate region P5 and conductivesegments corresponding to features of an adjacent cell, e.g., anti-fusecell A2 discussed below with respect to FIG. 1C.

In the embodiment depicted in FIG. 1A, anti-fuse bits B1 and B5 areformed based on active region AA1 and the other features of anti-fusecell A1 configured as discussed above. In various embodiments, anti-fusecell A1 includes anti-fuse bits B1 and B5 formed based on active regionAA1 otherwise configured so as to be capable of being programmed andread by the programming and read operations discussed above.

In the embodiment depicted in FIG. 1A, anti-fuse cell A1 includesconductive region V2 positioned at the location at which conductiveregion Z2 overlies gate region P6. In some embodiments, anti-fuse cellA1 includes conductive region V2 positioned at the location at whichconductive region Z2 overlies gate region P5, anti-fuse cell A1 therebyhaving a configuration corresponding to being rotated 180 degrees aboutan axis extending in the Y direction, and corresponding to that of ananti-fuse cell A2, discussed below with respect to FIG. 1C.

In the embodiment depicted in FIG. 1A, anti-fuse cell A1 includesconductive regions Z2 and V2 positioned between active regions AA2 andAA1 along the Y direction, and conductive regions Z0, V0, Z1, and V1positioned between active regions AA1 and AA0 along the Y direction.

In some embodiments, anti-fuse cell A1 includes conductive regions Z0,V0, Z1, and V1 positioned between active regions AA2 and AA1 along the Ydirection, conductive regions Z2 and V2 positioned between activeregions AA1 and AA0 along the Y direction, and conductive region V2positioned at the location at which conductive region Z2 overlies gateregion P6, anti-fuse cell A1 thereby having a configurationcorresponding to being rotated 180 degrees about an axis extending inthe X direction, and corresponding to that of an anti-fuse cell A3,discussed below with respect to FIG. 1C.

In some embodiments, anti-fuse cell A1 includes conductive regions Z0,V0, Z1, and V1 positioned between active regions AA2 and AA1 along the Ydirection, conductive regions Z2 and V2 positioned between activeregions AA1 and AA0 along the Y direction, and conductive region V2positioned at the location at which conductive region Z2 overlies gateregion P5, anti-fuse cell A1 thereby having a configurationcorresponding to being rotated 180 degrees about an axis extending inthe X direction and 180 degrees about an axis extending in the Ydirection, and corresponding to that of an anti-fuse cell A4, discussedbelow with respect to FIG. 1C.

By each of the configurations discussed above, the programming and readcurrent path of anti-fuse bit B1 includes the portion of the gatestructure corresponding to gate region P4 having length L, and theprogramming and read current path of anti-fuse bit B5 includes theportion of the gate structure corresponding to gate region P7 havinglength L.

Conductive regions V0 and V1 and active region AA1 thereby define gatestructure portions of the programming and read current paths ofanti-fuse bits B1 and B5 that are shorter than the distance betweenadjacent active areas and do not overlie active areas in addition to theactive area corresponding to active region AA1. Thus, the programmingand read current paths of anti-fuse bits B1 and B5 are shorter, andthereby less resistive, than programming and read current paths inapproaches in which at least one gate structure portion overlies one ormore active areas in addition to an active area including thecorresponding anti-fuse bit.

By being less resistive than programming and read current paths in suchother approaches, the programming and read current paths of anti-fusebits B1 and B5 reduce overall parasitic path resistance, therebyimproving the reliability of programming and read operations compared tothe other approaches.

Further, because the gate structure portions of the read current pathsof anti-fuse bits B1 and B5 have the same length L, read current pathresistance values for anti-fuse bits B1 and B5 have less variabilitythan in approaches in which gate structure portions of read currentpaths of anti-fuse bits have significantly different lengths.Accordingly, for a given read voltage level, read current values forread operations on anti-fuse bits B1 and B5 have less variability thanin approaches in which gate structure portions of read current paths ofanti-fuse bits have significantly different lengths.

FIGS. 1C and 1D are diagrams of anti-fuse cell array 100, in accordancewith some embodiments. FIGS. 1C and 1D depict plan views of differingportions of an IC layout diagram of anti-fuse cell array 100, based onanti-fuse cell A1, and the X and Y directions, each discussed above withrespect to FIG. 1A.

In addition to anti-fuse cell A1, gate regions P1-P10, bit line BL1, andthe X and Y directions discussed above with respect to FIG. 1A, FIG. 1Cdepicts anti-fuse cells A2-A4, gate regions P11-P18 parallel to gateregions P1-P10, and bit lines BL2-BL4 parallel to bit line BL1.

FIG. 1D depicts anti-fuse cells A1 and A2, simplified for the purpose ofclarity, gate regions P4-P7, and conductive regions MWLP0, MWLR0, MWLR1,MWLP1, VWLP0, VWLR0, VWLR1, and VWLP1.

FIG. 1C depicts anti-fuse cells A1 and A2 with smooth borders andanti-fuse cells A3 and A4 with patterned borders. Anti-fuse cell A2 ispositioned adjacent to and abutting anti-fuse cell A1 in the negative Ydirection. Anti-fuse cell A3 is positioned adjacent to and overlappinganti-fuse cell A1 in the positive X direction. Anti-fuse cell A4 ispositioned adjacent to and abutting anti-fuse cell A3 in the negative Ydirection and adjacent to and overlapping anti-fuse cell A2 in thepositive X direction.

Anti-fuse cell A1 is an embodiment of anti-fuse cell A1 having theconfiguration depicted in FIG. 1A, and each of anti-fuse cells A2-A4 isan embodiment of anti-fuse cell A1 having one of the otherconfigurations discussed above with respect to anti-fuse cell A1.

Anti-fuse cell A2 has a configuration of anti-fuse cell A1 in whichconductive regions Z0, V0, Z1, and V1 are positioned between activeregions AA1 and AA0 along the Y direction, conductive regions Z2 and V2are positioned between active regions AA2 and AA1 along the Y direction,and conductive region V2 is positioned at the location at whichconductive region Z2 overlies gate region P5.

Anti-fuse cell A3 has a configuration of anti-fuse cell A1 in whichconductive regions Z0, V0, Z1, and V1 are positioned between activeregions AA2 and AA1 along the Y direction, conductive regions Z2 and V2are positioned between active regions AA1 and AA0 along the Y direction,and conductive region V2 is positioned at the location at whichconductive region Z2 overlies gate region P14.

Anti-fuse cell A4 has a configuration of anti-fuse cell A1 in whichconductive regions Z0, V0, Z1, and V1 are positioned between activeregions AA2 and AA1 along the Y direction, conductive regions Z2 and V2are positioned between active regions AA1 and AA0 along the Y direction,and conductive region V2 is positioned at the location at whichconductive region Z2 overlies gate region P13.

Each bit line BL1 and BL2 overlies anti-fuse cells A1 and A3, and eachbit line BL2-BL4 overlies anti-fuse cells A2 and A4 such that bit lineBL2 overlies each anti-fuse cell A1-A4. Each gate region P1-P10 overliesanti-fuse cells A1 and A2, and each gate region P9-P18 overliesanti-fuse cells A3 and A4 such that each gate region P9 and P10 overlieseach anti-fuse cell A1-A4.

In various embodiments, some or all of the portions of bit lines BL1-BL4overlying corresponding anti-fuse cells A1-A4 are included or notincluded in the layout diagrams of the corresponding anti-fuse cellsA1-A4, and some or all of the portions of gate regions P1-P18 overlyingcorresponding anti-fuse cells A1-A4 are included or not included in thelayout diagrams of the corresponding anti-fuse cells A1-A4.

In the embodiment depicted in FIG. 1C, portions of anti-fuse cells A1and A2 overlapping portions of anti-fuse cells A3 and A4 include twogate regions P9 and P10, and each combination of anti-fuse cells A1 andA3 and anti-fuse cells A2 and A4 includes 18 gate regions P1-P18. Invarious embodiments, portions of anti-fuse cells A1 and A2 overlappingportions of anti-fuse cells A3 and A4 include fewer or greater than twogate regions. In various embodiments, each combination of anti-fusecells A1 and A3 and anti-fuse cells A2 and A4 includes fewer or greaterthan 18 gate regions.

In the embodiment depicted in FIG. 1C, anti-fuse cell array 100 includesfour anti-fuse cells A1-A4. In various embodiments, anti-fuse cell array100 includes fewer or greater than four anti-fuse cells.

As discussed above with respect to FIG. 1A, and also depicted in FIGS.1C and 1D, an IC device manufactured based on anti-fuse cell A1 includesanti-fuse bits B1 and B5 positioned within active region AA1. Details ofanti-fuse bits B1 and B5, e.g., the embodiment depicted in FIG. 1A, arenot included in FIGS. 1C and 1D for the purpose of clarity.

In addition to anti-fuse bits B1 and B5, an IC device manufactured basedon anti-fuse cell array 100 includes anti-fuse bits B2 and B6 positionedwithin an active area corresponding to active regions AA2 of anti-fusecell A1 and AA0 of anti-fuse cell A2, anti-fuse bits B3 and B7positioned within an active area corresponding to active region AA1 ofanti-fuse cell A2, and anti-fuse bits B4 and B8 positioned within anactive area corresponding to active regions AA2 of anti-fuse cell A2 andAA0 of an anti-fuse cell (not shown) adjacent to anti-fuse cell A2 inthe negative Y direction.

An IC device manufactured based on anti-fuse cell array 100 furtherincludes anti-fuse bits B9 and B13 positioned within an active areacorresponding to active region AA1 of anti-fuse cell A3, anti-fuse bitsB10 and B14 positioned within an active area corresponding to activeregions AA2 of anti-fuse cell A3 and AA0 of anti-fuse cell A4, anti-fusebits B11 and B15 positioned within an active area corresponding toactive region AA1 of anti-fuse cell A4, and anti-fuse bits B12 and B16positioned within an active area corresponding to active regions AA2 ofanti-fuse cell A4 and AA0 of an anti-fuse cell (not shown) adjacent toanti-fuse cell A4 in the negative Y direction.

An IC device manufactured based on anti-fuse cell array 100 therebyincludes a column of four anti-fuse bits B1-B4, a column of fouranti-fuse bits B5-B8, a column of four anti-fuse bits B9-B12, and acolumn of four anti-fuse bits B13-B16. In various embodiments, one ormore columns of anti-fuse bits based on anti-fuse cell array 100includes one or more anti-fuse bits (not shown) in addition to four ofanti-fuse bits B1-B16 based on one or more anti-fuse cells (not shown)above or below one or more of anti-fuse cells A1-A4 in the Y direction.

An IC device manufactured based on anti-fuse cell array 100 furtherincludes the one or more conductive layer segments corresponding to bitline BL1 electrically connected with anti-fuse bits B1 and B5 throughthe one or more conductive layer segments corresponding to conductiveregion C1 of anti-fuse cell A1, discussed above with respect to FIG. 1A,and one or more conductive layer segments corresponding to bit line BL1electrically connected with anti-fuse bits B9 and B13 through one ormore conductive layer segments corresponding to a conductive region C1of anti-fuse cell A3.

Similarly, an IC device manufactured based on anti-fuse cell array 100includes one or more conductive layer segments corresponding to bit lineBL2 electrically connected with anti-fuse bits B2 and B6 through one ormore conductive layer segments corresponding to a conductive region C1of anti-fuse cells A1 and A2, and with anti-fuse bits B10 and B14through one or more conductive layer segments corresponding to aconductive region C1 of anti-fuse cells A3 and A4; one or moreconductive layer segments corresponding to bit line BL3 electricallyconnected with anti-fuse bits B3 and B7 through one or more conductivelayer segments corresponding to a conductive region C1 of anti-fuse cellA2, and with anti-fuse bits B11 and B15 through one or more conductivelayer segments corresponding to a conductive region C1 of anti-fuse cellA4; and one or more conductive layer segments corresponding to bit lineBL4 electrically connected with anti-fuse bits B4 and B8 through one ormore conductive layer segments corresponding to a conductive region C1of anti-fuse cell A2, and with anti-fuse bits B12 and B16 through one ormore conductive layer segments corresponding to a conductive region C1of anti-fuse cell A4.

Each anti-fuse cell A1-A4 includes conductive regions Z0 and Z1separated by distance D1 in the X direction, as discussed above withrespect to FIG. 1A. In various embodiments, each instance of distance D1has a same value, or one or more instances of distance D1 has one ormore values different from a value of one or more other instances ofdistance D1.

FIG. 1E depicts the embodiment of FIG. 1C, and also includes a zig-zagpattern ZZ formed by the configuration of anti-fuse cells A1-A4 withinanti-fuse cell array 100. Pattern ZZ traces the locations at whichconductive regions Z0 and Z1 are separated by distance D1 withinanti-fuse cells A1-A4.

Conductive regions Z0 and Z1 of anti-fuse cell A1 are aligned withconductive region Z2 of anti-fuse cell A3 along the X direction andseparated by a distance D2. Distance D2 has a value equal to or greaterthan the predetermined distance based on one or more design rules forthe conductive layer that includes conductive regions Z0, Z1, and Z2, asdiscussed above with respect to distance D1 and FIG. 1A.

Conductive region Z2 of anti-fuse cell A1 is aligned with conductiveregions Z0 and Z1 of anti-fuse cell A3 along the X direction andseparated by distance D2, conductive regions Z0 and Z1 of anti-fuse cellA2 are aligned with conductive region Z2 of anti-fuse cell A4 along theX direction and separated by distance D2, and conductive region Z2 ofanti-fuse cell A2 is aligned with conductive regions Z0 and Z1 ofanti-fuse cell A4 along the X direction and separated by distance D2. Invarious embodiments, each instance of distance D2 has a same value, orone or more instances of distance D2 has one or more values differentfrom a value of one or more other instances of distance D2.

As discussed above with respect to FIGS. 1A and 1B, each of the gatestructure portions corresponding to gate region P4 and anti-fuse bit B1and to gate region P7 and anti-fuse bit B5 has length L. By thearrangement of anti-fuse cells A1-A4 in anti-fuse cell array 100, eachanti-fuse bit B2-B4 and B6-B16 similarly includes a gate structureportion corresponding to a gate region P4, P7, P12, or P15 between anactive area and an adjacent conductive region V0 or V1, each gatestructure portion thereby having length L (not shown for anti-fuse bitsB4 and B8).

In various embodiments, each instance of length L has a same value basedon uniform spacing between active regions and adjacent conductiveregions, or one or more instances of length L has a value different fromone or more other instances of length L based on variable spacingbetween one or more active regions and one or more conductive regions.In some embodiments, variable spacing between one or more active regionsand one or more conductive regions is based on an offset or otherdifference between an active region pitch and a conductive region pitch.

As discussed above with respect to FIG. A1, adjacent active regions AA0and AA1 of anti-fuse cell A1 are separated by distance AAL greater thanlength L. Anti-fuse cell array 100 includes each additional pair ofadjacent active regions separated by distance AAL (not labeled for thepurpose of clarity) greater than length L. In various embodiments, eachinstance of distance AAL has a same value based on uniform spacingbetween adjacent active regions, or one or more instances of distanceAAL has a value different from one or more other instances of distanceAAL based on variable spacing between one or more pairs of adjacentactive regions.

As depicted in FIG. 1D, each conductive region MWLP0, MWLR0, MWLR1,MWLP1 is a region in the IC layout diagram included in the manufacturingprocess as part of defining one or more segments of one or moreconductive layers in the IC device. In various embodiments, one or moreof conductive regions MWLP0, MWLR0, MWLR1, or MWLP1 corresponds to oneor more segments of a same or different conductive layers in the ICdevice. In various embodiments, one or more of conductive regions MWLP0,MWLR0, MWLR1, or MWLP1 corresponds to one or more of a metal one or ahigher metal layer in the IC device. In some embodiments, conductiveregions MWLP0 and MWLP1 are included in a manufacturing process as partof defining conductive segments 5MWLP0 and 5MWLP1, respectively,discussed below with respect to FIG. 5C.

With respect to anti-fuse bits B1-B8, conductive region MWLP0 extends inthe Y direction and overlies each conductive region Z0, conductiveregion MWLR0 extends in the Y direction and overlies one conductiveregion Z2, conductive region MWLR1 extends in the Y direction andoverlies the other conductive region Z2, and conductive region MWLP1extends in the Y direction and overlies each conductive region Z1.

Each conductive region VWLP0, VWLR0, VWLR1, and VWLP1 is a region in theIC layout diagram included in the manufacturing process as part ofdefining one or more segments of one or more conductive layers in the ICdevice configured to form an electrical connection between one or moreconductive layer segments corresponding to one of conductive regionsMWLP0, MWLR0, MWLR1, or MWLP1 and one of conductive regions Z0, Z1, orZ2. In various embodiments, the one or more conductive layer segmentscorresponding to each conductive region VWLP0, VWLR0, VWLR1, and VWLP1includes a via between one or more metal layer segments corresponding toone of conductive regions Z0, Z1, or Z2 and one or more metal layersegments corresponding to one of conductive regions MWLP0, MWLR0, MWLR1,or MWLP1. In some embodiments, conductive regions VWLP0, VWLP1 areincluded in a manufacturing process as part of defining respective vias5VWLP0 and 5VWLP1 discussed below with respect to FIG. 5C.

In some embodiments in which anti-fuse cell array 100 includes anti-fusebits in addition to anti-fuse bits B1-B8, anti-fuse cell array 100includes conductive regions (not shown) in addition to conductiveregions MWLP0, MWLR0, MWLR1, MWLP1, VWLP0, VWLR0, VWLR1, and VWLP1 thatare configured with respect to the additional anti-fuse bits in themanner discussed above with respect to anti-fuse bits B1-B8.

By the configuration of anti-fuse cell array 100 discussed above, eachcolumn of anti-fuse bits, e.g., anti-fuse bits B1-B4, is electricallyconnected to a corresponding conductive segment, e.g., a segmentcorresponding to conductive region MWLP0, through multiple conductivesegments, e.g., segments corresponding to conductive regions V0, Z0, andVWLP0, in which a total of two anti-fuse bits are positioned betweenadjacent conductive segments of the multiple conductive segments.Accordingly, each read current path corresponding to an anti-fuse bitincludes a gate structure portion having length L based on the activearea corresponding to the anti-fuse bit being adjacent to a conductivesegment of the multiple conductive segments.

In the embodiment depicted in FIGS. 1C and 1D, an IC layout diagram ofanti-fuse cell array 100 has the configuration discussed above based onIC layout diagrams of embodiments of anti-fuse cell A1, discussed abovewith respect to FIG. 1A. In various embodiments, an IC layout ofanti-fuse cell array 100 is otherwise based on one or more IC layoutdiagrams of one or more anti-fuse cells so as to have the configurationin which each read current path corresponding to an anti-fuse bitincludes a gate structure portion having length L shorter than distanceAAL based on the active area corresponding to the anti-fuse bit beingadjacent to a conductive segment of multiple conductive segments.

In programming and read operations, each anti-fuse bit B1-B4 isresponsive to signals WLP0 and WLR0 received from conductive segmentscorresponding to respective conductive regions MWLP0 and MWLR0 on gatestructures corresponding to respective gate regions P4 and P5, and eachanti-fuse bit B5-B8 is responsive to signals WLR1 and WLP1 received fromconductive segments corresponding to respective conductive regions MWLR1and MWLP1 on gate structures corresponding to respective gate regions P6and P7.

In programming and read operations, each anti-fuse bit B9-B12 isresponsive to signals WLP2 and WLR2 received from conductive segmentscorresponding to respective conductive regions (not shown) on gatestructures corresponding to respective gate regions P12 and P13, andeach anti-fuse bit B13-B16 is responsive to signals WLR3 and WLP3received from conductive segments corresponding to respective conductiveregions (not shown) on gate structures corresponding to respective gateregions P14 and P15. Signals WLP2, WLR2, WLP3, and WLR3 are configuredto control the corresponding bit cells in the manner discussed abovewith respect to signals WLP0, WLR0, WLP1, and WLR1 and FIGS. 1A and 1B.

An IC device manufactured based on anti-fuse cell array 100, e.g., ICdevice 5A1 discussed below with respect to FIGS. 5A-5C, is therebyconfigured such that each anti-fuse bit B2-B4 and B6-B16 is responsiveto a pair of corresponding signals WLP0 and WLR0, WLP1 and WLR1, WLP2and WLR2, or WLP3 and WLR3, and to a reference voltage level provided ona bit line based on a corresponding bit line BL1-BL4 in programming andread operations in the manner discussed above with respect to anti-fusebits B1 and B5 and FIGS. 1A and 1B.

Based on the configuration discussed above, the programming and readcurrent paths of anti-fuse bits B1-B16 include gate structure portionsthat are shorter than the distance between adjacent active areas, andthereby less resistive, than programming and read current paths inarrays based on approaches in which gate structure portions overlie oneor more active regions in addition to an active region including thecorresponding anti-fuse bit. Anti-fuse cell array 100 thereby realizesthe benefits discussed above with respect to anti-fuse cell A1.

Because each gate structure portion of the programming and read currentpath of anti-fuse bits B1-B16 has length L based on a conductive regionadjacent to an active area, programming and read current path resistancevalues within anti-fuse cell array 100 are more uniform than programmingand read current path resistance values in arrays in which a subset ofgate structure portions overlie one or more active regions in additionto active regions including the corresponding anti-fuse bits.

As discussed below with respect to FIGS. 1F-1H, the increased uniformityresults in less variability in read current values compared toapproaches in which a subset of gate structure portions overlie one ormore active regions in addition to active regions including thecorresponding anti-fuse bits.

FIG. 1F is a schematic diagram of a portion of anti-fuse cell array 100corresponding to anti-fuse bits B1-B8, in accordance with someembodiments. FIG. 1F includes signals WLP0, WLR0, WLR1, and WLP1,resistors RP0 and RP1, bit line BL1, gate regions P4-P7, and anti-fusebits B1 and B5, each discussed above with respect to FIGS. 1A and 1B,and bit lines BL2-BL4 and anti-fuse bits B2-B4 and B6-B8, each discussedabove with respect to FIGS. 1C-1E.

FIG. 1F also includes resistors RR0, RR1, and RBL1-RBL4. Resistor RR0represents the gate structure portion corresponding to gate region P5between a given one of anti-fuse bits B1-B4 and a nearest conductiveregion V2, resistor RR1 represents the gate structure portioncorresponding to gate region P6 between a given one of anti-fuse bitsB5-B8 and a nearest conductive region V2, and each resistor RBL1-RBL4represents one or more conductive segments corresponding to a respectiveone of bit lines BL1-BL4.

As discussed above with respect to FIGS. 1A and 1B, resistor RP0represents the length of the gate structure portion corresponding togate region P4 between anti-fuse bit B1 and a nearest conductive regionV0, and resistor RP1 represents the length of the gate structure portioncorresponding to gate region P7 between anti-fuse bit B5 and a nearestconductive region V1. In the embodiment depicted in FIGS. 1F-1H, eachgate structure portion corresponding to gate region P4 between anti-fusebits B1-B4 and a nearest conductive region V0 has a same length suchthat resistor RP0 has a same value for each anti-fuse bit B1-B4, andeach gate structure portion corresponding to gate region P7 betweenanti-fuse bits B5-B8 and a nearest conductive region V1 has a samelength such that resistor RP1 has a same value for each anti-fuse bitB1-B4.

Based on the layout of anti-fuse cell array 100, in at least some cases,a length of a gate structure portion between a given one of anti-fusebits B1-B8 and a nearest conductive region V2 is different from one ormore lengths of structure portions between another one or more ofanti-fuse bits B1-B8 and a nearest conductive region V2. In such cases,corresponding resistors RR0 and/or RR1 have nominal values that differbased on the differing lengths.

In some embodiments, in at least some cases, a length of a gatestructure portion between a given one or more of anti-fuse bits B1-B8and a nearest conductive region V2 is the same as a length of one ormore gate structure portions between another one or more of anti-fusebits B1-B8 and a nearest conductive region V2. In such cases,corresponding resistors RR0 and/or RR1 have a same nominal value basedon the same lengths.

Resistors RBL1-RBL4 have values that vary based on the dimensions of theone or more conductive segments corresponding to the respective bitlines BL1-BL4, the dimensions including bit line lengths that vary basedon a position of a given anti-fuse bit along a given bit line. In theembodiment depicted in FIGS. 1F-1H, a resistivity of the one or moreconductive segments is sufficiently small that such variations are notsignificant, and each resistor RBL1-RBL4 is considered to have a samenominal value.

FIG. 1G is a schematic diagram of a portion of anti-fuse cell array 100corresponding to anti-fuse bits B1-B4, in accordance with someembodiments. In addition to a subset of the features depicted in FIG.1F, FIG. 1G includes resistors RVZ and 2RPO.

Each resistor RVZ represents a conductive path corresponding to aninstance of conductive region VWLP0, an instance of conductive regionV0, and a portion of the conductive segment corresponding to conductiveregion Z0 connecting the instances of conductive regions VWLP0 and V0.Based on the instances of conductive regions VWLP0, V0, and Z0 havingsimilar layouts, resistors RVZ have a same nominal value.

Each resistor 2RPO represents a portion of the gate structurecorresponding to gate region P4 between adjacent anti-fuse bits and freefrom an electrical connection corresponding to a conductive region V0.Because the gate structure corresponding to gate region P4 includes twoportions corresponding to a resistor RP0 for each portion correspondingto a resistor 2RP0, resistors 2RP0 have values significantly larger thanthose of resistors RP0. In some embodiments, a resistor 2RP0 has anominal value approximately double that of a resistor RP0.

As discussed above with respect to FIGS. 1A and 1B, in a read operationon anti-fuse bit B1, signal WLP0 causes current IBL to flow throughanti-fuse bit B1 and bit line BL1, and the value of current IBL is usedto determine the programmed status of anti-fuse bit B1. As depicted inFIGS. 1F and 1G, in addition to anti-fuse bit B1 itself, the readcurrent path for anti-fuse bit B1 includes resistors RVZ, RP0, and RBL1.

Similarly, for each anti-fuse bit B2-B4, the read current path includesthe corresponding anti-fuse bit, one of resistors RBL2-RBL4corresponding to a respective bit line BL2-BL4, and resistors RVZ andRP0. Based on the layout of anti-fuse cell array 100, the read currentpath for each anti-fuse bit B1-B4 does not include resistor 2RP0.

As discussed above, in the embodiment depicted in FIGS. 1F-1H, resistorsRBL1-RBL4, RVZ, and RPO have respective nominal values that are the samefor each anti-fuse bit B1-B4. Accordingly, in read operations onanti-fuse bits B1-B4, read currents have values that are more uniformthan in approaches in which resistor RP0 has nominal values that varyamong anti-fuse bits, for example by including a resistor such asresistor 2RP0 in a subset of the read current paths.

FIG. 1H is a schematic diagram of a portion of anti-fuse cell array 100corresponding to a generic representation of an anti-fuse bit Bn, inaccordance with some embodiments. Anti-fuse bit Bn corresponds to one ofanti-fuse bits B1-B16, discussed above with respect to FIGS. 1A-1E, andincludes a transistor BnR and a resistor RBn. Transistor BnR correspondsto transistor B1R or B5R, and resistor RBn represents a low resistanceprogrammed status of anti-fuse bit Bn corresponding to resistor RB1 orRB5, discussed above with respect to FIGS. 1A and 1B.

Anti-fuse bit Bn is electrically connected with a bit line BLncorresponding to a bit line BL1-BL4, and has a read current path thatincludes resistors RVZ, RPn corresponding to resistor RP0 or RP1, andRBLn corresponding to a respective resistor RBL1-RBL4.

In a read operation on anti-fuse bit Bn, a signal WLPn, corresponding toa signal WLP0 or WLP1, causes a read current IBLn to flow based on thevalues of resistances RVZ, RPn, RBn, and RBLn. In the embodimentdepicted in FIGS. 1F-1H, because the respective nominal values ofresistances RVZ, RPn, and RBLn are uniform throughout anti-fuse cellarray 100, a distribution of read current values IBLn has a narrowergrouping than read current distributions in approaches in which resistorRPn has nominal values that vary among anti-fuse bits Bn, for example byincluding a resistor such as resistor 2RP0 in a subset of the readcurrent paths.

In the read operation on anti-fuse bit Bn, a signal WLRn, correspondingto a signal WLR0 or WLR1, is received by transistor BnR through aresistor RRn, corresponding to resistor RR0 or RR1, thereby causingtransistor BnR to turn on and enabling read current IBLn to flow.Because the read current path of anti-fuse bit Bn does not includeresistor RRn, variations in values of resistor RRn among instances ofanti-fuse bit Bn in anti-fuse cell array 100 do not affect theuniformity of read current IBLn values.

FIG. 2 is a flowchart of a method 200 of generating an IC layoutdiagram, in accordance with some embodiments. In some embodiments,generating the IC layout diagram includes generating an IC layoutdiagram of an anti-fuse cell, e.g., anti-fuse cell A1 discussed abovewith respect to FIGS. 1A-1D.

The operations of method 200 are capable of being performed as part of amethod of forming one or more IC devices including one or more anti-fusestructures, e.g., IC device 5A1 discussed below with respect to FIGS.5A-5C, manufactured based on the generated IC layout diagram.Non-limiting examples of IC devices include memory circuits, logicdevices, processing devices, signal processing circuits, and the like.

In some embodiments, some or all of method 200 is executed by aprocessor of a computer. In some embodiments, some or all of method 200is executed by a processor 702 of EDA system 700, discussed below withrespect to FIG. 7.

Some or all of the operations of method 200 are capable of beingperformed as part of a design procedure performed in a design house,e.g., design house 820 discussed below with respect to FIG. 8.

In some embodiments, the operations of method 200 are performed in theorder depicted in FIG. 2. In some embodiments, the operations of method200 are performed in an order other than the order depicted in FIG. 2.In some embodiments, one or more operations are performed before,between, during, and/or after performing one or more operations ofmethod 200.

At operation 210, an active region is intersected with first and secondgate regions, thereby defining locations of first and second anti-fusestructures in the active region. Intersecting the active region with thefirst and second gate regions includes extending each of the first andsecond gate regions to an area outside the active region along adirection perpendicular to a direction along which the active regionextends.

In some embodiments, intersecting the active region with the first andsecond gate regions is part of intersecting the active region with aplurality of gate regions that includes one or more gate regions inaddition to the first and second gate regions. In some embodiments, theone or more additional gate regions include one or more dummy gateregions.

Defining the locations of the first and second anti-fuse structures inthe active region includes defining a rectangle or other area usable ina manufacturing process for positioning one or more dielectric layerscapable of being sustainably altered by a sufficiently strong electricfield.

In some embodiments, intersecting the active region with the first andsecond gate regions includes intersecting active region AA1 with gateregions P4 and P7, discussed above with respect to FIGS. 1A-1D.

At operation 220, the first and second gate regions are overlaid withrespective first and second conductive regions aligned in the directionperpendicular to the direction along which the first and second gateregions extend. Overlying the first gate region with a first conductiveregion defines a location of an electrical connection between the firstconductive region and the first gate region, and overlying the secondgate region with a second conductive region defines a location of anelectrical connection between the second conductive region and thesecond gate region.

Defining each of the locations of the electrical connections between thefirst and second conductive regions and the respective first and secondgate regions includes defining a distance from the active area to theelectrical connections less than a distance from the active area to anadjacent active area.

Defining the locations of the electrical connections includes defining arectangle or other area usable in a manufacturing process forpositioning one or more conductive segments capable of forming anelectrical connection from an overlying conductive segment to a gatestructure corresponding to the underlying gate region. In someembodiments, overlying the first and second conductive regions defineslocations of vias between corresponding gate structures and segments inan overlying metal layer. In some embodiments, overlying the first andsecond conductive regions is part of defining segments of a metal zerolayer.

In some embodiments, overlying the first and second conductive regionsincludes separating the first and second conductive regions by a spaceequal to or greater than a predetermined distance based on one or moredesign rules for the conductive layer that includes the first and secondconductive regions. In some embodiments, overlying the first and secondconductive regions includes separating the first and second conductiveregions by a space equal to or greater than minimum spacing rule of ametal zero layer.

In some embodiments, overlying the first and second gate regions withthe respective first and second conductive regions includes overlyinggate regions P4 and P7 with respective conductive regions Z0 and Z1,discussed above with respect to FIGS. 1A-1D.

At operation 230, in some embodiments, the active region is intersectedwith third and fourth gate regions parallel to the first and second gateregions. Intersecting the active region with the third and fourth gateregions includes defining locations of first and second transistors inthe active region.

Defining the locations of the first and second transistors in the activeregion includes defining a rectangle or other area usable in amanufacturing process for positioning one or more dielectric layerscapable of controlling a channel in the active area corresponding to theactive region. Defining the location of the first transistor includesthe first transistor being adjacent to the first anti-fuse structure,and defining the location of the second transistor includes the secondtransistor being adjacent to the second anti-fuse structure.

In various embodiments, intersecting the active region with the thirdand fourth gate regions includes positioning one or both of the first orsecond gate region inside or outside one or both of the third or fourthgate regions. In some embodiments, intersecting the active region withthe third and fourth gate regions includes positioning the space betweenthe first and second conductive regions to include the third and fourthgate regions.

In some embodiments, intersecting the active region with the third andfourth gate regions includes intersecting active region AA1 with gateregions P5 and P6, discussed above with respect to FIGS. 1A-1D.

At operation 240, in some embodiments, the active region and the firstand second gate regions are overlaid with a third conductive regionextending along the direction along which the active region extends. Insome embodiments, overlying the active region and the first and secondgate regions with the third conductive region includes defining one ormore conductive segments in a metal zero layer.

In some embodiments, overlying the active region with the thirdconductive region includes defining a location of an electricalconnection between the third conductive region and the active region.Defining the location of the electrical connection includes defining arectangle or other area usable in a manufacturing process forpositioning one or more conductive segments capable of forming anelectrical connection from an overlying conductive segment to the activearea corresponding to the active region. In some embodiments, overlyingthe active region defines the locations of a contact structure betweenthe active area and one or more segments in an overlying metal layer. Insome embodiments, defining the location of the electrical connectionincludes defining the location between the third and fourth gateregions.

In some embodiments, overlying the active region and the first andsecond gate regions with the third conductive region includes overlyingactive region AA1 and gate regions P4 and P7 with bit line BL1,discussed above with respect to FIGS. 1A-1C. In some embodiments,overlying the active region with the third conductive region includesdefining the location of one or more conductive segments correspondingto conductive region C1, discussed above with respect to FIGS. 1A-1C.

At operation 250, in some embodiments, the IC layout diagram is storedin a storage device. In various embodiments, storing the IC layoutdiagram in the storage device includes storing the IC layout diagram ina non-volatile, computer-readable memory or a cell library, e.g., adatabase, and/or includes storing the IC layout diagram over a network.In some embodiments, storing the IC layout diagram in the storage deviceincludes storing the IC layout diagram over network 714 of EDA system700, discussed below with respect to FIG. 7.

At operation 260, in some embodiments, the IC layout diagram is placedin an IC layout diagram of an anti-fuse array. In some embodiments,placing the IC layout diagram in the IC layout diagram of the anti-fusearray includes rotating the IC layout diagram about one or more axes orshifting the IC layout diagram relative to one or more additional IClayout diagrams in one or more directions.

At operation 270, in some embodiments, at least one of one or moresemiconductor masks, or at least one component in a layer of asemiconductor IC is fabricated based on the IC layout diagram.Fabricating one or more semiconductor masks or at least one component ina layer of a semiconductor IC is discussed below with respect to FIG. 8.

At operation 280, in some embodiments, one or more manufacturingoperations are performed based on the IC layout diagram. In someembodiments, performing one or more manufacturing operations includesperforming one or more lithographic exposures based on the IC layoutdiagram. Performing one or more manufacturing operations, e.g., one ormore lithographic exposures, based on the IC layout diagram is discussedbelow with respect to FIG. 8.

By executing some or all of the operations of method 200, an IC layoutdiagram is generated in which gate regions corresponding to read currentpaths have the properties, and thereby the benefits, discussed abovewith respect to anti-fuse cell A1 and anti-fuse cell array 100.

FIGS. 3A-3D are diagrams of respective anti-fuse arrays 300A-300D, inaccordance with some embodiments. Each of FIGS. 3A-3D depicts a planview of an IC layout diagram of an arrangement of multiple embodimentsof anti-fuse array cell A1, simplified for the purpose of clarity, anddiscussed above with respect to FIGS. 1A-1C. FIG. 3A depicts anti-fusearray 300A including anti-fuse cells A1 and A2, FIG. 3B depictsanti-fuse array 300B including anti-fuse cells A1 and A2, FIG. 3Cdepicts anti-fuse array 300C including anti-fuse cells A1-A4, and FIG.3D depicts anti-fuse array 300D including anti-fuse cells A1-A4.

In the embodiments depicted in FIGS. 3A-3D, each respective anti-fusearray 300A-300D includes four adjacent columns COL1-COL4, each columnincluding four anti-fuse cells. In various embodiments, an anti-fusearray 300A-300D includes greater or fewer than four adjacent columnsand/or each column includes greater or fewer than four anti-fuse cells.

In anti-fuse arrays 300A and 300B, each column COL1-COL4 includesanti-fuse cells A1 and A2 alternating along the Y direction. Inanti-fuse array 300A, columns COL1 and COL3 include a first subset ofanti-fuse cells A1 and A2, and columns COL2 and COL4 include a secondsubset of anti-fuse cells A1 and A2. Columns COL2 and COL4 including thesecond subset are shifted along the Y direction relative to columns COL1and COL3 including the first subset.

In anti-fuse array 300B, columns COL1 and COL2 include a first subset ofanti-fuse cells A1 and A2, and columns COL3 and COL4 include a secondsubset of anti-fuse cells A1 and A2. Columns COL3 and COL4 including thesecond subset are shifted along the Y direction relative to columns COL1and COL2 including the first subset.

The second subset being shifted relative to the first subset includes ananti-fuse structure location of the first subset being aligned with ananti-fuse structure location of the second subset, and an electricalconnection location of the first subset being aligned with a midpointbetween two adjacent electrical connection locations of the secondsubset along the X direction.

In anti-fuse arrays 300A and 300B, columns overlap at each location atwhich a column including the first subset is adjacent to a columnincluding the second subset. At the overlap locations, the combinationof the overlapping columns and the second subset being shifted relativeto the first subset results in each of anti-fuse arrays 300A and 300Bincluding the layout configuration of anti-fuse cell array 100,discussed above with respect to FIG. 1C.

In various embodiments, one or both of anti-fuse arrays 300A or 300B ispart of a larger array that includes configurations other than thosedepicted in FIGS. 3A and 3B. Non-limiting examples include arrays inwhich one or both subsets include more than two adjacent columns and/ora variety of numbers of adjacent columns.

Anti-fuse arrays 300C and 300D include anti-fuse cells A1-A4 arranged inrows in addition to being arranged in columns. Each row either anti-fusecells A1 and A3 alternating along the X direction, or anti-fuse cells A2and A4 alternating along the X direction.

In anti-fuse array 300C, each of columns COL1 and COL3 includesanti-fuse cells A1 and A2 alternating along the Y direction, and each ofcolumns COL2 and COL4 includes anti-fuse cells A3 and A4 alternating inthe Y direction. In anti-fuse array 300D, each of columns COL1 and COL3includes anti-fuse cells A1-A4 arranged from A1 to A4 along the negativeY direction, and each of columns COL2 and COL4 includes the arrangementof columns COL1 and COL3 shifted by two cells along the Y direction.

In anti-fuse arrays 300C and 300D, each column overlaps with eachadjacent column. Each grouping of anti-fuse cells A1-A4 thereby includesthe layout configuration of anti-fuse cell array 100, discussed abovewith respect to FIG. 1C.

In various embodiments, one or both of anti-fuse arrays 300C or 300D ispart of a larger array that includes configurations other than thosedepicted in FIGS. 3C and 3D. Non-limiting examples include arrays inwhich parts or all of one or both of the configurations depicted inFIGS. 3C and 3D are combined.

By including the configuration of anti-fuse cell array 100, IC layoutdiagrams of anti-fuse arrays 300A-300D, and IC devices manufacturedbased thereon, are capable of realizing the benefits discussed abovewith respect to anti-fuse cell A1 and anti-fuse cell array 100.

FIG. 4 is a flowchart of a method 400 of generating an IC layoutdiagram, in accordance with some embodiments. In some embodiments,generating the IC layout diagram includes generating an IC layoutdiagram of an anti-fuse cell array, e.g., anti-fuse cell array 100,discussed above with respect to FIGS. 1C and 1D.

The operations of method 400 are capable of being performed as part of amethod of forming one or more IC devices including one or more anti-fusestructures, e.g., IC device 5A1 discussed below with respect to FIGS.5A-5C, manufactured based on the generated IC layout diagram.Non-limiting examples of IC devices include memory circuits, logicdevices, processing devices, signal processing circuits, and the like.

In some embodiments, some or all of method 400 is executed by aprocessor of a computer. In some embodiments, some or all of method 400is executed by a processor 702 of EDA system 700, discussed below withrespect to FIG. 7.

Some or all of the operations of method 400 are capable of beingperformed as part of a design procedure performed in a design house,e.g., design house 820 discussed below with respect to FIG. 8.

In some embodiments, the operations of method 400 are performed in theorder depicted in FIG. 4. In some embodiments, the operations of method400 are performed in an order other than the order depicted in FIG. 4.In some embodiments, one or more operations are performed before,between, during, and/or after performing one or more operations ofmethod 400.

At operation 410, a first subset of a plurality of anti-fuse structurelayouts and a second subset of the plurality of anti-fuse structurelayouts are received, each of the first and second subsets extending ina first direction. In various embodiments, one or both of receiving thefirst or second subsets includes receiving one or more anti-fuse celllayout diagrams. In various embodiments, one or both of receiving thefirst or second subsets includes receiving one or more IC layoutdiagrams of one or more of anti-fuse cells A1-A4, discussed above withrespect to FIGS. 1A-1D.

In some embodiments, each of the first subset and the second subsetincludes a plurality of layout regions between the anti-fuse structurelayouts of the plurality of anti-fuse structure layouts, the pluralityof layout regions alternating between first layout regions and secondlayout regions. Each of the first layout regions includes a firstconductive region extending along the second direction and a secondconductive region extending along the second direction and aligned withthe first conductive region along the second direction, and each of thesecond layout regions includes a third conductive region extending alongthe second direction. In some embodiments, the first layout regionincludes conductive regions Z0 and Z1, and the second layout regionincludes conductive region Z2, discussed above with respect to FIGS.1A-1D.

In some embodiments, receiving the second subset includes receiving aconfiguration of the second subset corresponding to a configuration ofthe first subset rotated 180 degrees about an axis extending along thefirst direction. In some embodiments, receiving the second subsetincludes receiving the configuration of one or both of anti-fuse cellsA2 or A4 corresponding to the configuration of one or both of anti-fusecells A1 or A3 rotated 180 degrees about an axis extending along the Ydirection, as discussed above with respect to FIGS. 1A-1D.

In some embodiments, receiving each of the first and second subsetsincludes each of the first and second subsets including a plurality ofanti-fuse structure locations at intersections of a gate region and aplurality of active regions, the gate region extending in the firstdirection, and a plurality of electrical connection locations atintersections of the gate region and a plurality of overlying conductiveregions. A total of two anti-fuse structure locations of the pluralityof anti-fuse structure locations are positioned between each pair ofadjacent electrical connection locations of the plurality of electricalconnection locations.

In some embodiments, receiving the first subset includes receiving oneor more layouts corresponding to anti-fuse bits B1-B8, and receiving thesecond subset includes receiving one or more layouts corresponding toanti-fuse bits B9-B16, each discussed above with respect to FIGS. 1A-1D.

In some embodiments, the first subset is one first subset of a pluralityof first subsets, and receiving the first subset includes receiving theplurality of first subsets. In some embodiments, the second subset isone second subset of a plurality of second subsets, and receiving thesecond subset includes receiving the plurality of second subsets. Insome embodiments, receiving the plurality of first subsets includesreceiving columns COL1 and COL3 or columns COL1 and COL2, and receivingthe plurality of second subsets includes receiving columns COL2 and COL4or columns COL3 and COL4, discussed above with respect to FIGS. 3A-3D.

At operation 420, the second subset is placed adjacent to the firstsubset along a second direction perpendicular to the first direction byoverlapping the first subset with the second subset. Overlapping thefirst subset with the second subset includes one or more layout featuresbeing included in both of the first and second subsets.

In some embodiments, overlapping the first subset with the second subsetincludes both of the first and second subsets including one or more gateregions and/or one or more conductive regions in common. In variousembodiments, overlapping the first subset with the second subsetincludes at least one of each of anti-fuse cells A1-A4 including gateregions P9 and P10, both of anti-fuse cells A1 and A3 including aconductive region Z0 and a conductive region Z1, or both of anti-fusecells A2 and A4 including a conductive region Z0 and a conductive regionZ1, as discussed above with respect to FIGS. 1C and 1D.

In some embodiments, placing the second subset adjacent to the firstsubset includes shifting the second subset with respect to the firstsubset along the first direction. In some embodiments, shifting thesecond subset with respect to the first subset includes aligning thefirst layout regions of the first subset with the second layout regionsof the second subset along the second direction, and aligning the secondlayout regions of the first subset with the first layout regions of thesecond subset along the second direction. In some embodiments, shiftingthe second subset with respect to the first subset includes aligningconductive regions Z0 and Z1 of the first subset with conductive regionsZ2 of the second subset.

In some embodiments, shifting the second subset with respect to thefirst subset includes shifting one or more of columns COL1-COL4 withrespect to another one or more of columns COL1-COL4 along the Ydirection, discussed above with respect to FIGS. 3A and 3B.

In some embodiments, placing the second subset adjacent to the firstsubset includes rotating the second subset 180 degrees about an axisextending along the first direction. In some embodiments, placing thesecond subset adjacent to the first subset includes rotating one or bothof anti-fuse cells A1 or A2 180 degrees about an axis extending alongthe Y direction, thereby obtaining the configuration of correspondingone or both of anti-fuse cells A3 or A4.

In some embodiments, placing the second subset adjacent to the firstsubset includes placing the second subset having a configurationcorresponding to a configuration of the first subset rotated 180 degreesabout an axis extending along the first direction. In some embodiments,placing the second subset adjacent to the first subset includes placinganti-fuse cells A3 and A4 adjacent to respective anti-fuse cells A1 andA2, discussed above with respect to FIG. 1C. In some embodiments,placing the second subset adjacent to the first subset includes placingone or more of columns COL1-COL4 adjacent to another one or more ofcolumns COL1-COL4, discussed above with respect to FIGS. 3C and 3D.

In some embodiments in which the first subset is one first subset of aplurality of first subsets, the second subset is one second subset of aplurality of second subsets, placing the second subset adjacent to thefirst subset along the second direction includes placing each secondsubset of the plurality of second subsets adjacent to and overlapping acorresponding first subset of the plurality of first subsets along thesecond direction. In some embodiments, placing the second subsetadjacent to the first subset includes placing two or more of columnsCOL1-COL4 adjacent to another two or more of columns COL1-COL4,discussed above with respect to FIGS. 3A-3D.

At operation 430, in some embodiments, the IC layout diagram is storedin a storage device. In various embodiments, storing the IC layoutdiagram in the storage device includes storing the IC layout diagram ina non-volatile, computer-readable memory or a cell library, e.g., adatabase, and/or includes storing the IC layout diagram over a network.In some embodiments, storing the IC layout diagram in the storage deviceincludes storing the IC layout diagram over network 714 of EDA system700, discussed below with respect to FIG. 7.

At operation 440, in some embodiments, at least one of one or moresemiconductor masks, or at least one component in a layer of asemiconductor IC is fabricated based on the IC layout diagram.Fabricating one or more semiconductor masks or at least one component ina layer of a semiconductor IC is discussed below with respect to FIG. 8.

At operation 450, in some embodiments, one or more manufacturingoperations are performed based on the IC layout diagram. In someembodiments, performing one or more manufacturing operations includesperforming one or more lithographic exposures based on the IC layoutdiagram. Performing one or more manufacturing operations, e.g., one ormore lithographic exposures, based on the IC layout diagram is discussedbelow with respect to FIG. 8.

By executing some or all of the operations of method 400, an IC layoutdiagram is generated in which gate regions corresponding to read currentpaths have the properties, and thereby the benefits, discussed abovewith respect to anti-fuse cell A1 and anti-fuse cell array 100.

FIGS. 5A-5C are diagrams of IC device 5A1, in accordance with someembodiments. IC device 5A1 is formed by executing some or all of theoperations of methods 200 and/or 400 and is configured based on IClayout diagrams A1 and 100, discussed above with respect to FIGS. 1A-1D.In some embodiments, IC device 5A1 is included in an IC device 860manufactured by an IC manufacturer/fabricator (“fab”) 850, discussedbelow with respect to FIG. 8.

The depictions of IC device 5A1 in FIGS. 5A-5C are simplified for thepurpose of clarity. FIG. 5A depicts a plan view of IC device 5A1, FIG.5B depicts a cross-sectional view along a plane A-A′, and FIG. 5Cdepicts a cross-sectional view along a plane B-B′. FIG. 5A furtherdepicts the X and Y directions, discussed above with respect to FIG. 1A.

IC device 5A1 includes an active area 5AA1 in a substrate 500S extendingalong the X direction, and gate structures 5P4-5P7, each of whichextends along the Y direction and overlies active area 5AA1. Active area5AA1 is an N-type or P-type active area configured in accordance withactive region AA1, and gate structures 5P4-5P7 are gate structuresconfigured in accordance with respective gate regions P4-P7, each ofwhich is discussed above with respect to FIGS. 1A-1D.

Gate structure 5P4 includes a gate conductor 5C4 overlying a dielectriclayer 5D4, gate structure 5P5 includes a gate conductor 5C5 overlying adielectric layer 5D5, gate structure 5P6 includes a gate conductor 5C6overlying a dielectric layer 5D6, and gate structure 5P7 includes a gateconductor 5C7 overlying a dielectric layer 5D7.

An anti-fuse structure 5B1P includes the portion of gate structure 5P4overlying active area 5AA1 and the portions of active area 5AA1 adjacentto gate structure 5P4. A transistor 5B1R includes the portion of gatestructure 5P5 overlying active area 5AA1 and the portions of active area5AA1 adjacent to gate structure 5P5. An anti-fuse bit 5B1 includesanti-fuse structure 5B1P and transistor 5B1R.

An anti-fuse structure 5B5P includes the portion of gate structure 5P7overlying active area 5AA1 and the portions of active area 5AA1 adjacentto gate structure 5P7. A transistor 5B5R includes the portion of gatestructure 5P6 overlying active area 5AA1 and the portions of active area5AA1 adjacent to gate structure 5P6. An anti-fuse bit 5B5 includesanti-fuse structure 5B5P and transistor 5B5R.

A contact 5C1 is electrically connected to active area 5AA1 between gatestructures 5P5 and 5P6, and is configured in accordance with conductiveregion C1, discussed above with respect to FIGS. 1A-1D. A conductivesegment 5BL is electrically connected to the contact 5C1, and isconfigured in accordance with conductive region BL1, discussed abovewith respect to FIGS. 1A-1D. In some embodiments, conductive segment 5BLincludes a segment of a metal zero layer.

A via 5V0 is electrically connected to gate conductor 5C4, and a via 5V1is electrically connected to gate conductor 5C7. A distance betweenactive area 5AA1 and each of vias 5V0 and 5V1 corresponds to length L,discussed above with respect to FIGS. 1A-1D. Via 5V0 is configured inaccordance with conductive region V0 and via 5V1 is configured inaccordance with conductive region V1, each of which is discussed abovewith respect to FIGS. 1A-1D.

A conductive segment 5Z0 overlies via 5V0, is electrically connected tovia 5V0, and is configured in accordance with conductive region Z0,discussed above with respect to FIGS. 1A-1D. A conductive segment 5Z1overlies via 5V1, is electrically connected to via 5V1, and isconfigured in accordance with conductive region Z1, discussed above withrespect to FIGS. 1A-1D.

Conductive segments 5Z0 and 5Z1 are aligned with each other and alongthe X direction. In some embodiments, each of conductive segments 5Z0and 5Z1 includes a segment of a metal zero layer.

A via 5VWLP0 is electrically connected to conductive segment 5Z0, and avia 5VWLP1 is electrically connected to conductive segment 5Z1. Via5VWLP0 is configured in accordance with conductive region VWLP0 and via5VWLP1 is configured in accordance with conductive region VWLP1, each ofwhich is discussed above with respect to FIG. 1D.

A conductive segment 5MWLP0 overlies via 5VWLP0, is electricallyconnected to via 5VWLP0, and is configured in accordance with conductiveregion MWLP0, discussed above with respect to FIG. 1D. A conductivesegment 5MWLP1 overlies via 5VWLP1, is electrically connected to via5VWLP1, and is configured in accordance with conductive region MWLP1,discussed above with respect to FIG. 1D. In some embodiments, each ofconductive segments 5MWLP0 and 5MWLP1 includes a segment of a metal onelayer.

In the embodiment depicted in FIGS. 5A-5C, IC device 5A1 includes activearea 5AA1 and gate structures 5P4-5P7. In some embodiments, IC device5A1 includes one or more active areas (not shown) in addition to activearea 5AA1. In various embodiments, IC device 5A1 does not include one ormore of gate structures 5P4-5P7 or includes one or more gate structures(not shown) in addition to gate structures 5P4-5P7.

In some embodiments, IC device 5A1 is part of an anti-fuse cell arrayand includes additional anti-fuse structures, gate structures, andconductive segments (not shown) configured in accordance with anti-fusecell array 100, discussed above with respect to FIGS. 1C and 1D, oranti-fuse arrays 300A-300D, discussed above with respect to FIGS. 3A-3D.

In various embodiments, IC device 5A1 includes additional IC deviceelements (not shown), e.g., doped and/or epitaxial regions, wells, orisolation structures, suitable for configuring one or more combinationsof active areas, gate structures, and conductive segments as discussedabove.

In various embodiments, IC device 5A1 includes one or more additionalconductive elements (not shown), e.g., contacts, vias, or segments of ametal diffusion, metal zero, metal one, or higher metal layer,configured as one or more electrical connections to anti-fuse bits 5B1and 5B5.

By being configured in accordance with IC layout diagrams A1, 100, and300A-300B, discussed above with respect to FIGS. 1A-1D and 3A-3D, andmanufactured through execution of some or all of the operations ofmethods 200 and 400, discussed above with respect to FIGS. 2 and 4, ICdevice 5A1 enables the realization of the advantages discussed abovewith respect to IC layout diagrams A1 and 100.

FIG. 6 is a flowchart of a method 600 of performing a read operation onan anti-fuse cell, in accordance with some embodiments. The operationsof method 600 are capable of being performed as part of a method ofoperating one or more IC devices including one or more anti-fusestructures, e.g., IC device 5A1 discussed above with respect to FIGS.5A-5C.

In some embodiments, the operations of method 600 are performed in theorder depicted in FIG. 6. In some embodiments, the operations of method600 are performed in an order other than the order depicted in FIG. 6.In some embodiments, one or more operations are performed before,between, during, and/or after performing one or more operations ofmethod 600.

At operation 610, a read voltage is applied to a gate structurecorresponding to each of four bit cell structures of an anti-fuse cellarray. Applying the read voltage includes applying a reference voltageto a bit line electrically connected to a first one of the four bit cellstructures. The read voltage has a read voltage level, the referencevoltage has a reference voltage level, and a difference between the readvoltage level and the reference voltage level produces an electric fieldthat is sufficiently small to avoid sustainably altering dielectricmaterial of the first bit cell structure.

In some embodiments, applying the read voltage includes one of applyingsignal WLP0 to the gate structure corresponding to gate region P4,applying signal WLP1 to the gate structure corresponding to gate regionP7, applying signal WLP2 to the gate structure corresponding to gateregion P12, or applying signal WLP3 to the gate structure correspondingto gate region P15, discussed above with respect to FIGS. 1A-1D.

In some embodiments, applying the read voltage includes applying theread voltage at one of conductive segments 5MWLP0 or 5MWLP1, discussedabove with respect to FIG. 5C.

At operation 620, a bit cell current is caused to flow through the bitline electrically connected to the first bit cell structure. The bitcell current is based on a resistance of a portion of the gate structurebetween the first bit cell structure and a nearest via, the resistancehaving a value substantially independent of a position of the first bitcell structure within the four bit cell structures. Causing the bit cellcurrent to flow includes causing the bit cell current to have amagnitude sufficiently large to be sensed using a sense amplifier.

Causing the bit cell current to flow includes turning on a switchingdevice included in the first bit cell structure. In some embodiments,causing the bit cell current to flow includes causing bit line currentIBL to flow through one of resistors RP0 or RP1 by a corresponding oneof using signal WLR0 to turn on transistor B1R in anti-fuse bit B1 orusing signal WLR1 to turn on transistor B5R in anti-fuse bit B5,discussed above with respect to FIGS. 1A and 1B.

In some embodiments, causing the bit cell current to flow includes usingsignal WLR0 to cause the bit cell current to flow in a portion of thegate structure corresponding to gate region P4 adjacent to one ofanti-fuse bits B1-B4 and having length L, discussed above with respectto FIG. 1C.

In some embodiments, causing the bit cell current to flow includes usingsignal WLR1 to cause the bit cell current to flow in a portion of thegate structure corresponding to gate region P7 adjacent to one ofanti-fuse bits B5-B8 and having length L, discussed above with respectto FIG. 1C.

In some embodiments, causing the bit cell current to flow includes usingsignal WLR2 to cause the bit cell current to flow in a portion of thegate structure corresponding to gate region P12 adjacent to one ofanti-fuse bits B9-B12 and having length L, discussed above with respectto FIG. 1C.

In some embodiments, causing the bit cell current to flow includes usingsignal WLR3 to cause the bit cell current to flow in a portion of thegate structure corresponding to gate region P15 adjacent to one ofanti-fuse bits B13-B16 and having length L, discussed above with respectto FIG. 1C.

In some embodiments, causing the bit cell current to flow includescausing the bit cell current to flow through a portion of one of gatestructures 5P4 or 5P7, discussed above with respect to FIG. 5C.

At operation 630, in some embodiments, the cell current is sensed usingthe sense amplifier. In some embodiments, sensing the cell current usingthe sense amplifier includes determining a programmed status of thecorresponding anti-fuse structure.

At operation 640, in some embodiments, one or more of operations 610-630are repeated for at least a second bit cell structure, thereby causingbit cell currents to flow in two or more bit cell structures. In variousembodiments, repeating one or more of operations 610-630 includescausing a bit cell current to flow in a second one of the four bit cellstructures and/or causing a bit cell current to flow in a bit cellstructure other than the four bit cell structures. In some embodiments,repeating one or more of operations 610-630 includes repeating the oneor more of operations 610-630 on an anti-fuse cell array manufacturedbased on anti-fuse cell array 100.

By executing some or all of the operations of method 600, a readoperation is performed in which gate structure portions of read currentpaths have the properties, and thereby the benefits, discussed abovewith respect to anti-fuse cell A1 and anti-fuse cell array 100.

FIG. 7 is a block diagram of an electronic design automation (EDA)system 700, in accordance with some embodiments.

In some embodiments, EDA system 700 includes an APR system. Methodsdescribed herein of designing layout diagrams representing wire routingarrangements, in accordance with one or more embodiments, areimplementable, for example, using EDA system 700, in accordance withsome embodiments.

In some embodiments, EDA system 700 is a general purpose computingdevice including a hardware processor 702 and a non-transitory,computer-readable storage medium 704. Storage medium 704, amongst otherthings, is encoded with, i.e., stores, computer program code 706, i.e.,a set of executable instructions. Execution of instructions 706 byhardware processor 702 represents (at least in part) an EDA tool whichimplements a portion or all of, e.g., a method 900 described below withrespect to FIG. 9 (hereinafter, the noted processes and/or methods).

Processor 702 is electrically coupled to computer-readable storagemedium 704 via a bus 708. Processor 702 is also electrically coupled toan I/O interface 710 by bus 708. A network interface 712 is alsoelectrically connected to processor 702 via bus 708. Network interface712 is connected to a network 714, so that processor 702 andcomputer-readable storage medium 704 are capable of connecting toexternal elements via network 714. Processor 702 is configured toexecute computer program code 706 encoded in computer-readable storagemedium 704 in order to cause system 700 to be usable for performing aportion or all of the noted processes and/or methods. In one or moreembodiments, processor 702 is a central processing unit (CPU), amulti-processor, a distributed processing system, an applicationspecific integrated circuit (ASIC), and/or a suitable processing unit.

In one or more embodiments, computer-readable storage medium 704 is anelectronic, magnetic, optical, electromagnetic, infrared, and/or asemiconductor system (or apparatus or device). For example,computer-readable storage medium 704 includes a semiconductor orsolid-state memory, a magnetic tape, a removable computer diskette, arandom access memory (RAM), a read-only memory (ROM), a rigid magneticdisk, and/or an optical disk. In one or more embodiments using opticaldisks, computer-readable storage medium 704 includes a compact disk-readonly memory (CD-ROM), a compact disk-read/write (CD-R/W), and/or adigital video disc (DVD).

In one or more embodiments, storage medium 704 stores computer programcode 706 configured to cause system 700 (where such execution represents(at least in part) the EDA tool) to be usable for performing a portionor all of the noted processes and/or methods. In one or moreembodiments, storage medium 704 also stores information whichfacilitates performing a portion or all of the noted processes and/ormethods. In one or more embodiments, storage medium 704 stores library707 of standard cells including such standard cells as disclosed herein,e.g., an anti-fuse cell A1 discussed above with respect to FIGS. 1A-1D.

EDA system 700 includes I/O interface 710. I/O interface 710 is coupledto external circuitry. In one or more embodiments, I/O interface 710includes a keyboard, keypad, mouse, trackball, trackpad, touchscreen,and/or cursor direction keys for communicating information and commandsto processor 702.

EDA system 700 also includes network interface 712 coupled to processor702. Network interface 712 allows system 700 to communicate with network714, to which one or more other computer systems are connected. Networkinterface 712 includes wireless network interfaces such as BLUETOOTH,WIFI, WIMAX, GPRS, or WCDMA; or wired network interfaces such asETHERNET, USB, or IEEE-1364. In one or more embodiments, a portion orall of noted processes and/or methods, is implemented in two or moresystems 700.

System 700 is configured to receive information through I/O interface710. The information received through I/O interface 710 includes one ormore of instructions, data, design rules, libraries of standard cells,and/or other parameters for processing by processor 702. The informationis transferred to processor 702 via bus 708. EDA system 700 isconfigured to receive information related to a UI through I/O interface710. The information is stored in computer-readable medium 704 as userinterface (UI) 742.

In some embodiments, a portion or all of the noted processes and/ormethods is implemented as a standalone software application forexecution by a processor. In some embodiments, a portion or all of thenoted processes and/or methods is implemented as a software applicationthat is a part of an additional software application. In someembodiments, a portion or all of the noted processes and/or methods isimplemented as a plug-in to a software application. In some embodiments,at least one of the noted processes and/or methods is implemented as asoftware application that is a portion of an EDA tool. In someembodiments, a portion or all of the noted processes and/or methods isimplemented as a software application that is used by EDA system 700. Insome embodiments, a layout diagram which includes standard cells isgenerated using a tool such as VIRTUOSO® available from CADENCE DESIGNSYSTEMS, Inc., or another suitable layout generating tool.

In some embodiments, the processes are realized as functions of aprogram stored in a non-transitory computer readable recording medium.Examples of a non-transitory computer readable recording medium include,but are not limited to, external/removable and/or internal/built-instorage or memory unit, e.g., one or more of an optical disk, such as aDVD, a magnetic disk, such as a hard disk, a semiconductor memory, suchas a ROM, a RAM, a memory card, and the like.

FIG. 8 is a block diagram of IC manufacturing system 800, and an ICmanufacturing flow associated therewith, in accordance with someembodiments. In some embodiments, based on a layout diagram, at leastone of (A) one or more semiconductor masks or (B) at least one componentin a layer of a semiconductor integrated circuit is fabricated usingmanufacturing system 800.

In FIG. 8, IC manufacturing system 800 includes entities, such as adesign house 820, a mask house 830, and an IC manufacturer/fabricator(“fab”) 850, that interact with one another in the design, development,and manufacturing cycles and/or services related to manufacturing an ICdevice 860. The entities in system 800 are connected by a communicationsnetwork. In some embodiments, the communications network is a singlenetwork. In some embodiments, the communications network is a variety ofdifferent networks, such as an intranet and the Internet. Thecommunications network includes wired and/or wireless communicationchannels. Each entity interacts with one or more of the other entitiesand provides services to and/or receives services from one or more ofthe other entities. In some embodiments, two or more of design house820, mask house 830, and IC fab 850 is owned by a single larger company.In some embodiments, two or more of design house 820, mask house 830,and IC fab 850 coexist in a common facility and use common resources.

Design house (or design team) 820 generates an IC design layout diagram822. IC design layout diagram 822 includes various geometrical patterns,e.g., an IC layout diagram depicted in FIG. 1A, 1C, 1D, or 3A-3D,designed for an IC device 860, e.g., IC device 5A1, discussed above withrespect to FIGS. 5A-5C. The geometrical patterns correspond to patternsof metal, oxide, or semiconductor layers that make up the variouscomponents of IC device 860 to be fabricated. The various layers combineto form various IC features. For example, a portion of IC design layoutdiagram 822 includes various IC features, such as an active region, gateelectrode, source and drain, metal lines or vias of an interlayerinterconnection, and openings for bonding pads, to be formed in asemiconductor substrate (such as a silicon wafer) and various materiallayers disposed on the semiconductor substrate. Design house 820implements a proper design procedure to form IC design layout diagram822. The design procedure includes one or more of logic design, physicaldesign or place and route. IC design layout diagram 822 is presented inone or more data files having information of the geometrical patterns.For example, IC design layout diagram 822 can be expressed in a GDSIIfile format or DFII file format.

Mask house 830 includes data preparation 832 and mask fabrication 844.Mask house 830 uses IC design layout diagram 822 to manufacture one ormore masks 845 to be used for fabricating the various layers of ICdevice 860 according to IC design layout diagram 822. Mask house 830performs mask data preparation 832, where IC design layout diagram 822is translated into a representative data file (“RDF”). Mask datapreparation 832 provides the RDF to mask fabrication 844. Maskfabrication 844 includes a mask writer. A mask writer converts the RDFto an image on a substrate, such as a mask (reticle) 845 or asemiconductor wafer 853. The design layout diagram 822 is manipulated bymask data preparation 832 to comply with particular characteristics ofthe mask writer and/or requirements of IC fab 850. In FIG. 10, mask datapreparation 832 and mask fabrication 844 are illustrated as separateelements. In some embodiments, mask data preparation 832 and maskfabrication 844 can be collectively referred to as mask datapreparation.

In some embodiments, mask data preparation 832 includes opticalproximity correction (OPC) which uses lithography enhancement techniquesto compensate for image errors, such as those that can arise fromdiffraction, interference, other process effects and the like. OPCadjusts IC design layout diagram 822. In some embodiments, mask datapreparation 832 includes further resolution enhancement techniques(RET), such as off-axis illumination, sub-resolution assist features,phase-shifting masks, other suitable techniques, and the like orcombinations thereof. In some embodiments, inverse lithographytechnology (ILT) is also used, which treats OPC as an inverse imagingproblem.

In some embodiments, mask data preparation 832 includes a mask rulechecker (MRC) that checks the IC design layout diagram 822 that hasundergone processes in OPC with a set of mask creation rules whichcontain certain geometric and/or connectivity restrictions to ensuresufficient margins, to account for variability in semiconductormanufacturing processes, and the like. In some embodiments, the MRCmodifies the IC design layout diagram 822 to compensate for limitationsduring mask fabrication 844, which may undo part of the modificationsperformed by OPC in order to meet mask creation rules.

In some embodiments, mask data preparation 832 includes lithographyprocess checking (LPC) that simulates processing that will beimplemented by IC fab 850 to fabricate IC device 860. LPC simulates thisprocessing based on IC design layout diagram 822 to create a simulatedmanufactured device, such as IC device 860. The processing parameters inLPC simulation can include parameters associated with various processesof the IC manufacturing cycle, parameters associated with tools used formanufacturing the IC, and/or other aspects of the manufacturing process.LPC takes into account various factors, such as aerial image contrast,depth of focus (“DOF”), mask error enhancement factor (“MEEF”), othersuitable factors, and the like or combinations thereof. In someembodiments, after a simulated manufactured device has been created byLPC, if the simulated device is not close enough in shape to satisfydesign rules, OPC and/or MRC are be repeated to further refine IC designlayout diagram 822.

It should be understood that the above description of mask datapreparation 832 has been simplified for the purposes of clarity. In someembodiments, data preparation 832 includes additional features such as alogic operation (LOP) to modify the IC design layout diagram 822according to manufacturing rules. Additionally, the processes applied toIC design layout diagram 822 during data preparation 832 may be executedin a variety of different orders.

After mask data preparation 832 and during mask fabrication 844, a mask845 or a group of masks 845 are fabricated based on the modified ICdesign layout diagram 822. In some embodiments, mask fabrication 844includes performing one or more lithographic exposures based on ICdesign layout diagram 822. In some embodiments, an electron-beam(e-beam) or a mechanism of multiple e-beams is used to form a pattern ona mask (photomask or reticle) 845 based on the modified IC design layoutdiagram 822. Mask 1045 can be formed in various technologies. In someembodiments, mask 845 is formed using binary technology. In someembodiments, a mask pattern includes opaque regions and transparentregions. A radiation beam, such as an ultraviolet (UV) beam, used toexpose the image sensitive material layer (e.g., photoresist) which hasbeen coated on a wafer, is blocked by the opaque region and transmitsthrough the transparent regions. In one example, a binary mask versionof mask 845 includes a transparent substrate (e.g., fused quartz) and anopaque material (e.g., chromium) coated in the opaque regions of thebinary mask. In another example, mask 845 is formed using a phase shifttechnology. In a phase shift mask (PSM) version of mask 845, variousfeatures in the pattern formed on the phase shift mask are configured tohave proper phase difference to enhance the resolution and imagingquality. In various examples, the phase shift mask can be attenuated PSMor alternating PSM. The mask(s) generated by mask fabrication 844 isused in a variety of processes. For example, such a mask(s) is used inan ion implantation process to form various doped regions insemiconductor wafer 853, in an etching process to form various etchingregions in semiconductor wafer 853, and/or in other suitable processes.

IC fab 850 includes wafer fabrication 852. IC fab 850 is an ICfabrication business that includes one or more manufacturing facilitiesfor the fabrication of a variety of different IC products. In someembodiments, IC Fab 850 is a semiconductor foundry. For example, theremay be a manufacturing facility for the front end fabrication of aplurality of IC products (front-end-of-line (FEOL) fabrication), while asecond manufacturing facility may provide the back end fabrication forthe interconnection and packaging of the IC products (back-end-of-line(BEOL) fabrication), and a third manufacturing facility may provideother services for the foundry business.

IC fab 850 uses mask(s) 845 fabricated by mask house 830 to fabricate ICdevice 860. Thus, IC fab 850 at least indirectly uses IC design layoutdiagram 822 to fabricate IC device 860. In some embodiments,semiconductor wafer 853 is fabricated by IC fab 850 using mask(s) 845 toform IC device 860. In some embodiments, the IC fabrication includesperforming one or more lithographic exposures based at least indirectlyon IC design layout diagram 822. Semiconductor wafer 853 includes asilicon substrate or other proper substrate having material layersformed thereon. Semiconductor wafer 853 further includes one or more ofvarious doped regions, dielectric features, multilevel interconnects,and the like (formed at subsequent manufacturing steps).

Details regarding an integrated circuit (IC) manufacturing system (e.g.,system 800 of FIG. 8), and an IC manufacturing flow associated therewithare found, e.g., in U.S. Pat. No. 9,256,709, granted Feb. 9, 2016, U.S.Pre-Grant Publication No. 20150278429, published Oct. 1, 2015, U.S.Pre-Grant Publication No. 20140040838, published Feb. 6, 2014, and U.S.Pat. No. 7,260,442, granted Aug. 21, 2007, the entireties of each ofwhich are hereby incorporated by reference.

In some embodiments, an IC device includes a first anti-fuse structureincluding a first dielectric layer between a first gate conductor and afirst active area, a second anti-fuse structure including a seconddielectric layer between a second gate conductor and the first activearea, a first via electrically connected to the first gate conductor ata first location a first distance from the first active area, and asecond via electrically connected to the second gate conductor at asecond location a second distance from the first active area, whereinthe first distance is approximately equal to the second distance. Insome embodiments, the IC device includes a third anti-fuse structureincluding a third dielectric layer between the first gate conductor anda second active area, a fourth anti-fuse structure including a fourthdielectric layer between the second gate conductor and the second activearea, a third via electrically connected to the first gate conductor ata third location a third distance from the second active area, and afourth via electrically connected to the second gate conductor at afourth location a fourth distance from the second active area, whereinthe third distance is approximately equal to the fourth distance. Insome embodiments, the IC device includes a first conductive segmentelectrically connected to the first via and the third via, and a secondconductive segment electrically connected to the second via and thefourth via. In some embodiments, the first active area and the secondactive area are positioned between the first location and the thirdlocation and between the second location and the fourth location, andthe first active area and the second active area are adjacent activeareas of a plurality of active areas. In some embodiments, the IC deviceincludes a first transistor including a fifth dielectric layer between athird gate conductor and the first active area, a second transistorincluding a sixth dielectric layer between a fourth gate conductor andthe first active area, a third transistor including a seventh dielectriclayer between the third gate conductor and the second active area, afourth transistor including an eighth dielectric layer between thefourth gate conductor and the second active area, and a fifth viaelectrically connected to the third gate conductor or the fourth gateconductor at a fifth location between the first active area and thesecond active area. In some embodiments, the IC device includes a fifthanti-fuse structure including a ninth dielectric layer between a fifthgate conductor and a third active area, a sixth anti-fuse structureincluding a tenth dielectric layer between a sixth gate conductor andthe third active area, a sixth via electrically connected to the fifthgate conductor at a sixth location, and a seventh via electricallyconnected to the sixth gate conductor at a seventh location, wherein thefifth via, the sixth via, and the seventh via are aligned in a straightline.

In some embodiments, an IC device includes a first anti-fuse structureincluding a first dielectric layer between a first gate conductor and afirst active area, a second anti-fuse structure including a seconddielectric layer between a second gate conductor and the first activearea, and a first pair of conductive segments electrically connected tothe first and second gate conductors and aligned along a row directionperpendicular to a column direction of the first and second gateconductors. The first active area is included in a plurality of activeareas, the first pair of conductive segments is included in a pluralityof pairs of conductive segments, and adjacent pairs of conductivesegments of the plurality of pairs of conductive segments are separatedby a total of two active areas of the plurality of active areas. In someembodiments, the first anti-fuse structure is included in a firstanti-fuse device including a first selection transistor, the secondanti-fuse structure is included in a second anti-fuse device including asecond selection transistor, the IC device includes a plurality ofsingle conductive segments alternating with the plurality of pairs ofconductive segments, and each single conductive segment of the pluralityof single conductive segments is electrically connected to one of thefirst or second selection transistors. In some embodiments, the ICdevice includes first through fourth adjacent metal segments extendingin the column direction and overlying the plurality of pairs ofconductive segments, wherein the first metal segment is electricallyconnected to the first anti-fuse structure through a first conductivesegment of each pair of conductive segments of the plurality of pairs ofconductive segments, the fourth metal segment is electrically connectedto the second anti-fuse structure through a second conductive segment ofeach pair of conductive segments of the plurality of pairs of conductivesegments, and the second and third metal segments are positioned betweenthe first and fourth metal segments. In some embodiments, the secondmetal segment is electrically connected to the first selectiontransistor through a first subset of the plurality of single conductivesegments, and the third metal segment is electrically connected to thesecond selection transistor through a second subset of the plurality ofsingle conductive segments. In some embodiments, the first subset of theplurality of single conductive segments alternates with the secondsubset of the plurality of single conductive segments. In someembodiments, the conductive segments of each pair of conductive segmentsof the plurality of pairs of conductive segments are separated by adistance corresponding to a minimum spacing rule for a conductive layerthat includes the plurality of pairs of conductive segments.

In some embodiments, an anti-fuse array includes first through fourthadjacent columns of anti-fuse bits, wherein the anti-fuse bits of thefirst and second anti-fuse bit columns include portions of active areasof a first active area column, and the anti-fuse bits of the third andfourth anti-fuse bit columns include portions of active areas of asecond active area column, a first set of conductive segment rows,wherein each row of the first set of conductive segment rows includesfirst and second conductive segments positioned between adjacent activeareas of the first active area column and a third conductive segmentpositioned between adjacent active areas of the second active areacolumn, and a second set of conductive segment rows alternating with thefirst set of conductive segment rows, wherein each row of the second setof conductive segment rows includes a fourth conductive segmentpositioned between adjacent active areas of the first active area columnand fifth and sixth conductive segments positioned between adjacentactive areas of the second active area column. In some embodiments, eachanti-fuse bit of the anti-fuse array includes an anti-fuse structure,each first conductive segment is electrically connected to eachanti-fuse structure of the first column of anti-fuse bits, each secondconductive segment is electrically connected to each anti-fuse structureof the second column of anti-fuse bits, each fifth conductive segment iselectrically connected to each anti-fuse structure of the third columnof anti-fuse bits, and each sixth conductive segment is electricallyconnected to each anti-fuse structure of the fourth column of anti-fusebits. In some embodiments, each anti-fuse bit of the anti-fuse arrayincludes a selection transistor, each conductive segment of a firstsubset of the third conductive segments is electrically connected toeach selection transistor of the third column of anti-fuse bits, eachconductive segment of a second subset of the third conductive segmentsis electrically connected to each selection transistor of the fourthcolumn of anti-fuse bits, each conductive segment of a first subset ofthe fourth conductive segments is electrically connected to eachselection transistor of the first column of anti-fuse bits, and eachconductive segment of a second subset of the fourth conductive segmentsis electrically connected to each selection transistor of the secondcolumn of anti-fuse bits. In some embodiments, the first subset of thethird conductive segments alternates with the second subset of the thirdconductive segments, and the first subset of the fourth conductivesegments alternates with the second subset of the fourth conductivesegments. In some embodiments, the anti-fuse array includes a firstmetal segment overlying and electrically connected to each firstconductive segment, a second metal segment overlying and electricallyconnected to each fourth conductive segment of the first subset of thefourth conductive segments, a third metal segment overlying andelectrically connected to each fourth conductive segment of the secondsubset of the fourth conductive segments, a fourth metal segmentoverlying and electrically connected to each second conductive segment,a fifth metal segment overlying and electrically connected to each fifthconductive segment, a sixth metal segment overlying and electricallyconnected to each third conductive segment of the first subset of thethird conductive segments, a seventh metal segment overlying andelectrically connected to each third conductive segment of the secondsubset of the third conductive segments, and an eighth metal segmentoverlying and electrically connected to each sixth conductive segment.In some embodiments, each anti-fuse bit of the first anti-fuse bitcolumn is configured to be programmed and read responsive to a firstpair of signals on the first and second metal segments, each anti-fusebit of the second anti-fuse bit column is configured to be programmedand read responsive to a second pair of signals on the third and fourthmetal segments, each anti-fuse bit of the third anti-fuse bit column isconfigured to be programmed and read responsive to a third pair ofsignals on the fifth and sixth metal segments, and each anti-fuse bit ofthe fourth anti-fuse bit column is configured to be programmed and readresponsive to a fourth pair of signals on the seventh and eighth metalsegments. In some embodiments, the anti-fuse array includes a pluralityof bit lines, each bit line of the plurality of bit lines beingelectrically coupled to active areas of each of the first and secondactive area columns and positioned between a row of the first set ofconductive segment rows and a row of the second set of conductivesegment rows.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit (IC) device comprising: afirst anti-fuse structure comprising a first dielectric layer between afirst gate conductor and a first active area; a second anti-fusestructure comprising a second dielectric layer between a second gateconductor and the first active area; a first via electrically connectedto the first gate conductor at a first location a first distance fromthe first active area; and a second via electrically connected to thesecond gate conductor at a second location a second distance from thefirst active area, wherein the first distance is approximately equal tothe second distance.
 2. The IC device of claim 1, further comprising: athird anti-fuse structure comprising a third dielectric layer betweenthe first gate conductor and a second active area; a fourth anti-fusestructure comprising a fourth dielectric layer between the second gateconductor and the second active area; a third via electrically connectedto the first gate conductor at a third location a third distance fromthe second active area; and a fourth via electrically connected to thesecond gate conductor at a fourth location a fourth distance from thesecond active area, wherein the third distance is approximately equal tothe fourth distance.
 3. The IC device of claim 2, further comprising: afirst conductive segment electrically connected to the first via and thethird via; and a second conductive segment electrically connected to thesecond via and the fourth via.
 4. The IC device of claim 2, wherein thefirst active area and the second active area are positioned between thefirst location and the third location and between the second locationand the fourth location, and the first active area and the second activearea are adjacent active areas of a plurality of active areas.
 5. The ICdevice of claim 4, further comprising: a first transistor comprising afifth dielectric layer between a third gate conductor and the firstactive area; a second transistor comprising a sixth dielectric layerbetween a fourth gate conductor and the first active area; a thirdtransistor comprising a seventh dielectric layer between the third gateconductor and the second active area; a fourth transistor comprising aneighth dielectric layer between the fourth gate conductor and the secondactive area; and a fifth via electrically connected to the third gateconductor or the fourth gate conductor at a fifth location between thefirst active area and the second active area.
 6. The IC device of claim5, further comprising: a fifth anti-fuse structure comprising a ninthdielectric layer between a fifth gate conductor and a third active area;a sixth anti-fuse structure comprising a tenth dielectric layer betweena sixth gate conductor and the third active area; a sixth viaelectrically connected to the fifth gate conductor at a sixth location;and a seventh via electrically connected to the sixth gate conductor ata seventh location, wherein the fifth via, the sixth via, and theseventh via are aligned in a straight line.
 7. The IC device of claim 6,further comprising: a first contact electrically connected to the firstactive area; a second contact electrically connected to the third activearea; and a conductive segment electrically connected to each of thefirst and second contacts and overlying each of the first and thirdactive areas.
 8. An integrated circuit (IC) device comprising: a firstanti-fuse structure comprising a first dielectric layer between a firstgate conductor and a first active area; a second anti-fuse structurecomprising a second dielectric layer between a second gate conductor andthe first active area; and a first pair of conductive segmentselectrically connected to the first and second gate conductors andaligned along a row direction perpendicular to a column direction of thefirst and second gate conductors, wherein the first active area isincluded in a plurality of active areas, the first pair of conductivesegments is included in a plurality of pairs of conductive segments, andadjacent pairs of conductive segments of the plurality of pairs ofconductive segments are separated by a total of two active areas of theplurality of active areas.
 9. The IC device of claim 8, wherein thefirst anti-fuse structure is included in a first anti-fuse devicecomprising a first selection transistor, the second anti-fuse structureis included in a second anti-fuse device comprising a second selectiontransistor, the IC device further comprises a plurality of singleconductive segments alternating with the plurality of pairs ofconductive segments, and each single conductive segment of the pluralityof single conductive segments is electrically connected to one of thefirst or second selection transistors.
 10. The IC device of claim 9,further comprising first through fourth adjacent metal segmentsextending in the column direction and overlying the plurality of pairsof conductive segments, wherein the first metal segment is electricallyconnected to the first anti-fuse structure through a first conductivesegment of each pair of conductive segments of the plurality of pairs ofconductive segments, the fourth metal segment is electrically connectedto the second anti-fuse structure through a second conductive segment ofeach pair of conductive segments of the plurality of pairs of conductivesegments, and the second and third metal segments are positioned betweenthe first and fourth metal segments.
 11. The IC device of claim 10,wherein the second metal segment is electrically connected to the firstselection transistor through a first subset of the plurality of singleconductive segments, and the third metal segment is electricallyconnected to the second selection transistor through a second subset ofthe plurality of single conductive segments.
 12. The IC device of claim11, wherein the first subset of the plurality of single conductivesegments alternates with the second subset of the plurality of singleconductive segments.
 13. The IC device of claim 8, wherein theconductive segments of each pair of conductive segments of the pluralityof pairs of conductive segments are separated by a distancecorresponding to a minimum spacing rule for a conductive layer thatincludes the plurality of pairs of conductive segments.
 14. An anti-fusearray comprising: first through fourth adjacent columns of anti-fusebits, wherein the anti-fuse bits of the first and second anti-fuse bitcolumns comprise portions of active areas of a first active area column,and the anti-fuse bits of the third and fourth anti-fuse bit columnscomprise portions of active areas of a second active area column; afirst set of conductive segment rows, wherein each row of the first setof conductive segment rows comprises first and second conductivesegments positioned between adjacent active areas of the first activearea column and a third conductive segment positioned between adjacentactive areas of the second active area column; and a second set ofconductive segment rows alternating with the first set of conductivesegment rows, wherein each row of the second set of conductive segmentrows comprises a fourth conductive segment positioned between adjacentactive areas of the first active area column and fifth and sixthconductive segments positioned between adjacent active areas of thesecond active area column.
 15. The anti-fuse array of claim 14, whereineach anti-fuse bit of the anti-fuse array comprises an anti-fusestructure, each first conductive segment is electrically connected toeach anti-fuse structure of the first column of anti-fuse bits, eachsecond conductive segment is electrically connected to each anti-fusestructure of the second column of anti-fuse bits, each fifth conductivesegment is electrically connected to each anti-fuse structure of thethird column of anti-fuse bits, and each sixth conductive segment iselectrically connected to each anti-fuse structure of the fourth columnof anti-fuse bits.
 16. The anti-fuse array of claim 15, wherein eachanti-fuse bit of the anti-fuse array further comprises a selectiontransistor, each conductive segment of a first subset of the thirdconductive segments is electrically connected to each selectiontransistor of the third column of anti-fuse bits, each conductivesegment of a second subset of the third conductive segments iselectrically connected to each selection transistor of the fourth columnof anti-fuse bits, each conductive segment of a first subset of thefourth conductive segments is electrically connected to each selectiontransistor of the first column of anti-fuse bits, and each conductivesegment of a second subset of the fourth conductive segments iselectrically connected to each selection transistor of the second columnof anti-fuse bits.
 17. The anti-fuse array of claim 16, wherein thefirst subset of the third conductive segments alternates with the secondsubset of the third conductive segments, and the first subset of thefourth conductive segments alternates with the second subset of thefourth conductive segments.
 18. The anti-fuse array of claim 16, furthercomprising: a first metal segment overlying and electrically connectedto each first conductive segment; a second metal segment overlying andelectrically connected to each fourth conductive segment of the firstsubset of the fourth conductive segments; a third metal segmentoverlying and electrically connected to each fourth conductive segmentof the second subset of the fourth conductive segments; a fourth metalsegment overlying and electrically connected to each second conductivesegment; a fifth metal segment overlying and electrically connected toeach fifth conductive segment; a sixth metal segment overlying andelectrically connected to each third conductive segment of the firstsubset of the third conductive segments; a seventh metal segmentoverlying and electrically connected to each third conductive segment ofthe second subset of the third conductive segments; and an eighth metalsegment overlying and electrically connected to each sixth conductivesegment.
 19. The anti-fuse array of claim 18, wherein each anti-fuse bitof the first anti-fuse bit column is configured to be programmed andread responsive to a first pair of signals on the first and second metalsegments, each anti-fuse bit of the second anti-fuse bit column isconfigured to be programmed and read responsive to a second pair ofsignals on the third and fourth metal segments, each anti-fuse bit ofthe third anti-fuse bit column is configured to be programmed and readresponsive to a third pair of signals on the fifth and sixth metalsegments, and each anti-fuse bit of the fourth anti-fuse bit column isconfigured to be programmed and read responsive to a fourth pair ofsignals on the seventh and eighth metal segments.
 20. The anti-fusearray of claim 14, further comprising a plurality of bit lines, each bitline of the plurality of bit lines being electrically coupled to activeareas of each of the first and second active area columns and positionedbetween a row of the first set of conductive segment rows and a row ofthe second set of conductive segment rows.